Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

Keun Heo; Kyung Sang Cho; Jun Young Choi; Sangmin Han; Yun Seop Yu; Yonmook Park; Gwangwe Yoo; Jin Hong Park; Sung Woo Hwang; Sang Yeol Lee

doi:10.1109/TED.2017.2717935

Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

Keun Heo^*
, Kyung Sang Cho
, Jun Young Choi
, Sangmin Han
, Yun Seop Yu
, Yonmook Park
, Gwangwe Yoo
, Jin Hong Park
, Sung Woo Hwang
, Sang Yeol Lee

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Korea University
Research Center for Time-Domain Nano-Functional Device
Samsung
Cheongju University
Hankyong National University
Minds Lab
Sungkyunkwan University

Research output: Contribution to journal › Journal article › peer-review

8 Scopus citations

Abstract

In this study, N-type amorphous indium zinc oxide thin-film transistors are fabricated and temperature-dependent electrical characteristics in the range of 170-295 K are analyzed through experimental measurements and using an equivalent-circuit model. In this model, thermionic field emission for reverse bias and a thermionic emission mechanism for forward bias are applied. The barrier height coefficient of a contact region between the channel and the Ti/Au electrode is 1.26 meV/K, and the resistance of the channel material decreases at a rate of - 0.39Ω·K^-1 at various temperatures. The obtained energy level is experimentally confirmed through a Kelvin probe measurement. In addition, the simulation results of the channel resistance successfully describe the Arrhenius behavior of the drain current and the Mott variable-range hopping conduction mechanism in a low-temperature regime below 230 K.

Original language	English
Article number	7968342
Pages (from-to)	3183-3188
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	8
DOIs	https://doi.org/10.1109/TED.2017.2717935
State	Published - 2017.08

Keywords

Barrier height
indium zinc oxide
modeling
Schottky diode
temperature dependence
thin-film transistor (TFT)

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10.1109/TED.2017.2717935

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@article{7258a8ec97bb4d37bc356d8f70af5c52,

title = "Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors",

abstract = "In this study, N-type amorphous indium zinc oxide thin-film transistors are fabricated and temperature-dependent electrical characteristics in the range of 170-295 K are analyzed through experimental measurements and using an equivalent-circuit model. In this model, thermionic field emission for reverse bias and a thermionic emission mechanism for forward bias are applied. The barrier height coefficient of a contact region between the channel and the Ti/Au electrode is 1.26 meV/K, and the resistance of the channel material decreases at a rate of - 0.39Ω·K-1 at various temperatures. The obtained energy level is experimentally confirmed through a Kelvin probe measurement. In addition, the simulation results of the channel resistance successfully describe the Arrhenius behavior of the drain current and the Mott variable-range hopping conduction mechanism in a low-temperature regime below 230 K.",

keywords = "Barrier height, indium zinc oxide, modeling, Schottky diode, temperature dependence, thin-film transistor (TFT)",

author = "Keun Heo and Cho, \{Kyung Sang\} and Choi, \{Jun Young\} and Sangmin Han and Yu, \{Yun Seop\} and Yonmook Park and Gwangwe Yoo and Park, \{Jin Hong\} and Hwang, \{Sung Woo\} and Lee, \{Sang Yeol\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2017",

month = aug,

doi = "10.1109/TED.2017.2717935",

language = "English",

volume = "64",

pages = "3183--3188",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

number = "8",

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TY - JOUR

T1 - Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

AU - Heo, Keun

AU - Cho, Kyung Sang

AU - Choi, Jun Young

AU - Han, Sangmin

AU - Yu, Yun Seop

AU - Park, Yonmook

AU - Yoo, Gwangwe

AU - Park, Jin Hong

AU - Hwang, Sung Woo

AU - Lee, Sang Yeol

PY - 2017/8

Y1 - 2017/8

N2 - In this study, N-type amorphous indium zinc oxide thin-film transistors are fabricated and temperature-dependent electrical characteristics in the range of 170-295 K are analyzed through experimental measurements and using an equivalent-circuit model. In this model, thermionic field emission for reverse bias and a thermionic emission mechanism for forward bias are applied. The barrier height coefficient of a contact region between the channel and the Ti/Au electrode is 1.26 meV/K, and the resistance of the channel material decreases at a rate of - 0.39Ω·K-1 at various temperatures. The obtained energy level is experimentally confirmed through a Kelvin probe measurement. In addition, the simulation results of the channel resistance successfully describe the Arrhenius behavior of the drain current and the Mott variable-range hopping conduction mechanism in a low-temperature regime below 230 K.

AB - In this study, N-type amorphous indium zinc oxide thin-film transistors are fabricated and temperature-dependent electrical characteristics in the range of 170-295 K are analyzed through experimental measurements and using an equivalent-circuit model. In this model, thermionic field emission for reverse bias and a thermionic emission mechanism for forward bias are applied. The barrier height coefficient of a contact region between the channel and the Ti/Au electrode is 1.26 meV/K, and the resistance of the channel material decreases at a rate of - 0.39Ω·K-1 at various temperatures. The obtained energy level is experimentally confirmed through a Kelvin probe measurement. In addition, the simulation results of the channel resistance successfully describe the Arrhenius behavior of the drain current and the Mott variable-range hopping conduction mechanism in a low-temperature regime below 230 K.

KW - Barrier height

KW - indium zinc oxide

KW - modeling

KW - Schottky diode

KW - temperature dependence

KW - thin-film transistor (TFT)

UR - https://www.scopus.com/pages/publications/85022201443

U2 - 10.1109/TED.2017.2717935

DO - 10.1109/TED.2017.2717935

M3 - Journal article

AN - SCOPUS:85022201443

SN - 0018-9383

VL - 64

SP - 3183

EP - 3188

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

M1 - 7968342

ER -

Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

Abstract

Keywords

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