Abstract
We investigated the influence of growth conditions on carrier dynamics in multilayer CdTe/ZnTe quantum dots (QDs) by monitoring the temperature dependence of the photoluminescence emission energy. The results were analyzed using the empirical Varshni and O'Donnell relations for temperature variation of the energy gap shift. Best fit values showed that the thermally activated transition between two different states occurs due to band low-temperature quenching with values separated by 5.0-6.5 meV. The addition of stack periods in multilayer CdTe/ZnTe QDs plays an important role in the energy gap shift, where the exciton binding energy is enhanced, and, conversely, the exciton-phonon coupling strength is suppressed with an average energy of 19.3-19.8 meV.
| Original language | English |
|---|---|
| Pages (from-to) | 8120-8124 |
| Number of pages | 5 |
| Journal | Journal of nanoscience and nanotechnology |
| Volume | 15 |
| Issue number | 10 |
| DOIs | |
| State | Published - 2015.10 |
Keywords
- Cadmium telluride
- Carrier dynamics
- Quantum dots
- Short-range exchange
- Zinc telluride
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Engineering - Chemical
- Chemistry
- Physics & Astronomy
- Biological Sciences
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