Temperature-dependent interface barrier behavior in MoS2/n-GaN 2D/3D heterojunction

V. Janardhanam; I. Jyothi; Sim Hoon Yuk; Zummukhozol Munkhsaikan; Chel Jong Choi

doi:10.1016/j.matlet.2021.129893

Temperature-dependent interface barrier behavior in MoS₂/n-GaN 2D/3D heterojunction

V. Janardhanam
, I. Jyothi
, Sim Hoon Yuk
, Zummukhozol Munkhsaikan
, Chel Jong Choi^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

11 Scopus citations

Abstract

We fabricated MoS₂/n-type GaN 2D/3D heterojunction diode, investigated its structural properties and temperature-dependent current–voltage (I–V) characteristics. The MoS₂ 2D film on GaN is 5.2-nm-thick with ~ 0.64 nm interlayer distance. The Barrier height and ideality factor of the MoS₂/n-type GaN heterojunction increase and decrease, respectively with rising temperature, associated with the barrier height inhomogeneities. The barrier height inhomogeneity evaluation considering the Gaussian distribution of barrier heights indicate the presence of double Gaussian barrier distribution with mean barrier heights of 0.95 and 1.44 eV and standard deviations of 0.11 and 0.18 eV in the temperature range of 125–225 and 225–400 K, respectively. Reverse current showed an electric field dependence with the carrier transport dominated by Poole-Frenkel emission irrespective of the temperature.

Original language	English
Article number	129893
Journal	Materials Letters
Volume	296
DOIs	https://doi.org/10.1016/j.matlet.2021.129893
State	Published - 2021.08.1

Keywords

GaN
Heterojunction
Inhomogeneity
MoS
Reverse current transport

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Mechanical
Physics & Astronomy

Access to Document

10.1016/j.matlet.2021.129893

Cite this

@article{28d19d762bb747768313ba0621040e8f,

title = "Temperature-dependent interface barrier behavior in MoS2/n-GaN 2D/3D heterojunction",

abstract = "We fabricated MoS2/n-type GaN 2D/3D heterojunction diode, investigated its structural properties and temperature-dependent current–voltage (I–V) characteristics. The MoS2 2D film on GaN is 5.2-nm-thick with \textasciitilde{} 0.64 nm interlayer distance. The Barrier height and ideality factor of the MoS2/n-type GaN heterojunction increase and decrease, respectively with rising temperature, associated with the barrier height inhomogeneities. The barrier height inhomogeneity evaluation considering the Gaussian distribution of barrier heights indicate the presence of double Gaussian barrier distribution with mean barrier heights of 0.95 and 1.44 eV and standard deviations of 0.11 and 0.18 eV in the temperature range of 125–225 and 225–400 K, respectively. Reverse current showed an electric field dependence with the carrier transport dominated by Poole-Frenkel emission irrespective of the temperature.",

keywords = "GaN, Heterojunction, Inhomogeneity, MoS, Reverse current transport",

author = "V. Janardhanam and I. Jyothi and Yuk, \{Sim Hoon\} and Zummukhozol Munkhsaikan and Choi, \{Chel Jong\}",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = aug,

day = "1",

doi = "10.1016/j.matlet.2021.129893",

language = "English",

volume = "296",

journal = "Materials Letters",

issn = "0167-577X",

}

TY - JOUR

T1 - Temperature-dependent interface barrier behavior in MoS2/n-GaN 2D/3D heterojunction

AU - Janardhanam, V.

AU - Jyothi, I.

AU - Yuk, Sim Hoon

AU - Munkhsaikan, Zummukhozol

AU - Choi, Chel Jong

PY - 2021/8/1

Y1 - 2021/8/1

N2 - We fabricated MoS2/n-type GaN 2D/3D heterojunction diode, investigated its structural properties and temperature-dependent current–voltage (I–V) characteristics. The MoS2 2D film on GaN is 5.2-nm-thick with ~ 0.64 nm interlayer distance. The Barrier height and ideality factor of the MoS2/n-type GaN heterojunction increase and decrease, respectively with rising temperature, associated with the barrier height inhomogeneities. The barrier height inhomogeneity evaluation considering the Gaussian distribution of barrier heights indicate the presence of double Gaussian barrier distribution with mean barrier heights of 0.95 and 1.44 eV and standard deviations of 0.11 and 0.18 eV in the temperature range of 125–225 and 225–400 K, respectively. Reverse current showed an electric field dependence with the carrier transport dominated by Poole-Frenkel emission irrespective of the temperature.

AB - We fabricated MoS2/n-type GaN 2D/3D heterojunction diode, investigated its structural properties and temperature-dependent current–voltage (I–V) characteristics. The MoS2 2D film on GaN is 5.2-nm-thick with ~ 0.64 nm interlayer distance. The Barrier height and ideality factor of the MoS2/n-type GaN heterojunction increase and decrease, respectively with rising temperature, associated with the barrier height inhomogeneities. The barrier height inhomogeneity evaluation considering the Gaussian distribution of barrier heights indicate the presence of double Gaussian barrier distribution with mean barrier heights of 0.95 and 1.44 eV and standard deviations of 0.11 and 0.18 eV in the temperature range of 125–225 and 225–400 K, respectively. Reverse current showed an electric field dependence with the carrier transport dominated by Poole-Frenkel emission irrespective of the temperature.

KW - GaN

KW - Heterojunction

KW - Inhomogeneity

KW - MoS

KW - Reverse current transport

UR - https://www.scopus.com/pages/publications/85104651085

U2 - 10.1016/j.matlet.2021.129893

DO - 10.1016/j.matlet.2021.129893

M3 - Journal article

AN - SCOPUS:85104651085

SN - 0167-577X

VL - 296

JO - Materials Letters

JF - Materials Letters

M1 - 129893

ER -