Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities

Sameer Chhajed; Jaehee Cho; E. Fred Schubert; Jong Kyu Kim; Daniel D. Koleske; Mary H. Crawford

doi:10.1002/pssa.201026668

Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities

Sameer Chhajed
, Jaehee Cho^*
, E. Fred Schubert
, Jong Kyu Kim
, Daniel D. Koleske
, Mary H. Crawford

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Pohang University of Science and Technology
Sandia National Laboratories, New Mexico

Research output: Contribution to journal › Journal article › peer-review

40 Scopus citations

Abstract

We have experimentally investigated the temperature dependence of optical-output power of light-emitting diodes (LEDs) with different threading dislocation densities (TDDs) to assess the influence of the TDD on the temperature stability of LEDs. Whereas the LED with high TDD shows a 64% decrease in optical-output power when the ambient temperature increases from 20 to 150 °C, the LED with low TDD shows only a 54% decrease. The temperature dependence of the optical-output power and current dependence of the characteristic temperature T _ch of LEDs shows that short radiative recombination lifetime and low TDDs are essential to obtain LED characteristics that are tolerant of high temperatures.

Original language	English
Pages (from-to)	947-950
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	208
Issue number	4
DOIs	https://doi.org/10.1002/pssa.201026668
State	Published - 2011.04

Keywords

dislocation density
GaInN
light-emitting diodes

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10.1002/pssa.201026668

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@article{769f2069bf9247489d5dede244cc578f,

title = "Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities",

abstract = "We have experimentally investigated the temperature dependence of optical-output power of light-emitting diodes (LEDs) with different threading dislocation densities (TDDs) to assess the influence of the TDD on the temperature stability of LEDs. Whereas the LED with high TDD shows a 64\% decrease in optical-output power when the ambient temperature increases from 20 to 150 °C, the LED with low TDD shows only a 54\% decrease. The temperature dependence of the optical-output power and current dependence of the characteristic temperature T ch of LEDs shows that short radiative recombination lifetime and low TDDs are essential to obtain LED characteristics that are tolerant of high temperatures.",

keywords = "dislocation density, GaInN, light-emitting diodes",

author = "Sameer Chhajed and Jaehee Cho and Schubert, \{E. Fred\} and Kim, \{Jong Kyu\} and Koleske, \{Daniel D.\} and Crawford, \{Mary H.\}",

year = "2011",

month = apr,

doi = "10.1002/pssa.201026668",

language = "English",

volume = "208",

pages = "947--950",

journal = "Physica Status Solidi (A) Applications and Materials Science",

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TY - JOUR

T1 - Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities

AU - Chhajed, Sameer

AU - Cho, Jaehee

AU - Schubert, E. Fred

AU - Kim, Jong Kyu

AU - Koleske, Daniel D.

AU - Crawford, Mary H.

PY - 2011/4

Y1 - 2011/4

N2 - We have experimentally investigated the temperature dependence of optical-output power of light-emitting diodes (LEDs) with different threading dislocation densities (TDDs) to assess the influence of the TDD on the temperature stability of LEDs. Whereas the LED with high TDD shows a 64% decrease in optical-output power when the ambient temperature increases from 20 to 150 °C, the LED with low TDD shows only a 54% decrease. The temperature dependence of the optical-output power and current dependence of the characteristic temperature T ch of LEDs shows that short radiative recombination lifetime and low TDDs are essential to obtain LED characteristics that are tolerant of high temperatures.

AB - We have experimentally investigated the temperature dependence of optical-output power of light-emitting diodes (LEDs) with different threading dislocation densities (TDDs) to assess the influence of the TDD on the temperature stability of LEDs. Whereas the LED with high TDD shows a 64% decrease in optical-output power when the ambient temperature increases from 20 to 150 °C, the LED with low TDD shows only a 54% decrease. The temperature dependence of the optical-output power and current dependence of the characteristic temperature T ch of LEDs shows that short radiative recombination lifetime and low TDDs are essential to obtain LED characteristics that are tolerant of high temperatures.

KW - dislocation density

KW - GaInN

KW - light-emitting diodes

UR - https://www.scopus.com/pages/publications/79954443124

U2 - 10.1002/pssa.201026668

DO - 10.1002/pssa.201026668

M3 - Journal article

AN - SCOPUS:79954443124

SN - 1862-6300

VL - 208

SP - 947

EP - 950

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 4

ER -

Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities

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Keywords

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