Temperature-dependent micro-photoluminescence of individual CdSe self-assembled quantum dots

J. C. Kim; H. Rho; L. M. Smith; Howard E. Jackson; S. Lee; M. Dobrowolska; J. K. Furdyna

doi:10.1063/1.124323

Temperature-dependent micro-photoluminescence of individual CdSe self-assembled quantum dots

J. C. Kim^*
, H. Rho
, L. M. Smith
, Howard E. Jackson
, S. Lee
, M. Dobrowolska
, J. K. Furdyna

^*Corresponding author for this work

Department of Physics

University of Cincinnati
University of Notre Dame

Research output: Contribution to journal › Journal article › peer-review

96 Scopus citations

Abstract

CdSe quantum dots embedded in a ZnSe matrix have been known to exhibit temperature-dependent excitonic emission. This phenomenon is studied using micro- and nanophotoluminescence. The influence of temperature on ultranarrow emissions from excitons confined to a single quantum dot, as well as statistical ensembles of up to 200 dots, was observed by changing the spatial resolution from 200 nm to 1.7 μm. Measurements of PL quenching with temperature reveal two different kinds of states responsible for the observed PL emission. In addition to the previously observed broad PL line persisting to 300 K with an activation energy around 40 meV, ultranarrow lines quenched at about 60 K with an effective activation energy of only 4.0 meV were found.

Original language	English
Pages (from-to)	214-216
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	2
DOIs	https://doi.org/10.1063/1.124323
State	Published - 1999.07.12

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@article{835961a1aca64ea99e41da77e1a9cc90,

title = "Temperature-dependent micro-photoluminescence of individual CdSe self-assembled quantum dots",

abstract = "CdSe quantum dots embedded in a ZnSe matrix have been known to exhibit temperature-dependent excitonic emission. This phenomenon is studied using micro- and nanophotoluminescence. The influence of temperature on ultranarrow emissions from excitons confined to a single quantum dot, as well as statistical ensembles of up to 200 dots, was observed by changing the spatial resolution from 200 nm to 1.7 μm. Measurements of PL quenching with temperature reveal two different kinds of states responsible for the observed PL emission. In addition to the previously observed broad PL line persisting to 300 K with an activation energy around 40 meV, ultranarrow lines quenched at about 60 K with an effective activation energy of only 4.0 meV were found.",

author = "Kim, \{J. C.\} and H. Rho and Smith, \{L. M.\} and Jackson, \{Howard E.\} and S. Lee and M. Dobrowolska and Furdyna, \{J. K.\}",

year = "1999",

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doi = "10.1063/1.124323",

language = "English",

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pages = "214--216",

journal = "Applied Physics Letters",

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T1 - Temperature-dependent micro-photoluminescence of individual CdSe self-assembled quantum dots

AU - Kim, J. C.

AU - Rho, H.

AU - Smith, L. M.

AU - Jackson, Howard E.

AU - Lee, S.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

PY - 1999/7/12

Y1 - 1999/7/12

N2 - CdSe quantum dots embedded in a ZnSe matrix have been known to exhibit temperature-dependent excitonic emission. This phenomenon is studied using micro- and nanophotoluminescence. The influence of temperature on ultranarrow emissions from excitons confined to a single quantum dot, as well as statistical ensembles of up to 200 dots, was observed by changing the spatial resolution from 200 nm to 1.7 μm. Measurements of PL quenching with temperature reveal two different kinds of states responsible for the observed PL emission. In addition to the previously observed broad PL line persisting to 300 K with an activation energy around 40 meV, ultranarrow lines quenched at about 60 K with an effective activation energy of only 4.0 meV were found.

AB - CdSe quantum dots embedded in a ZnSe matrix have been known to exhibit temperature-dependent excitonic emission. This phenomenon is studied using micro- and nanophotoluminescence. The influence of temperature on ultranarrow emissions from excitons confined to a single quantum dot, as well as statistical ensembles of up to 200 dots, was observed by changing the spatial resolution from 200 nm to 1.7 μm. Measurements of PL quenching with temperature reveal two different kinds of states responsible for the observed PL emission. In addition to the previously observed broad PL line persisting to 300 K with an activation energy around 40 meV, ultranarrow lines quenched at about 60 K with an effective activation energy of only 4.0 meV were found.

UR - https://www.scopus.com/pages/publications/0032607088

U2 - 10.1063/1.124323

DO - 10.1063/1.124323

M3 - Journal article

AN - SCOPUS:0032607088

SN - 0003-6951

VL - 75

SP - 214

EP - 216

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Temperature-dependent micro-photoluminescence of individual CdSe self-assembled quantum dots

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