Temperature-dependent Schottky diode behavior of Ni Schottky contacts to α-Ga2O3 film epitaxially grown on sapphire substrate

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Materials Science in Semiconductor Processing
State	Published - 2023.08.15

Cite this

@article{85ae4a26ecfc4cfdbd383d97ddca4080,

title = "Temperature-dependent Schottky diode behavior of Ni Schottky contacts to α-Ga2O3 film epitaxially grown on sapphire substrate",

author = "Kyu-Hwan Shim",

year = "2023",

month = aug,

day = "15",

language = "Korean",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}