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Terahertz characteristics of InGaAs with periodically-positioned InAlAs insertion layers

  • Dong Woo Park
  • , Jin Soo Kim
  • , Sam Kyu Noh
  • , Young Bin Ji
  • , Seung Jae Oh
  • , Tae In Jeon
  • Jeonbuk National University
  • Korea Research Institute of Standards and Science
  • Yonsei University
  • Korea Maritime and Ocean University

Research output: Contribution to conferenceConference paperpeer-review

Abstract

We present terahertz (THz) generation and detection characteristics of InGaAs with periodically-positioned InAlAs insertion layers (InGaAs PPIL). A THz transmitter with the InGaAs PPIL showed three times higher than that of an InGaAs epilayer without the insertion layer at the current signal for THz generation properties. Also, the detection properties of a THz receiver with the InGaAs PPIL showed over twenty-five times higher than that of a simple InGaAs epilayer. Also current signals of the InGaAs PPIL was improved with increasing the number of the InAlAs insertion layers.

Original languageEnglish
Title of host publicationIRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479982721
DOIs
StatePublished - 2015.11.11
Event40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015 - Hong Kong, China
Duration: 2015.08.232015.08.28

Publication series

NameIRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves

Conference

Conference40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
Country/TerritoryChina
CityHong Kong
Period15.08.2315.08.28

Quacquarelli Symonds(QS) Subject Topics

  • Computer Science & Information Systems
  • Physics & Astronomy

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