@inproceedings{145f282a867e433e827d20308dc45f56,
title = "Terahertz generation (0.3-0.8THz) achieved by photomixer based on low-temperature grown InGaAs emitter",
abstract = "Continuous-wave (CW) terahertz (THz) generation has been successfully achieved by low-temperature grown (LTG) In 1-xGa xAs (x=0.47) epitaxial layer as a THz emitter and a photomixer module with dual-wavelength laser as an optical beat source. The reflectance decay spectroscopy revealed a carrier lifetime of ∼ 2.5 ps in LTG-InGaAs layer grown at 220°C and subsequently in-situ annealed at 550°C for 10 min. The THz ouput characteristics are demonstrated in the range of 0.3-0.8 THz.",
keywords = "Carrier lifetime, Low-temperature-grown InGaAs, Photomixer, Terahertz",
author = "Kim, \{J. O.\} and Lee, \{S. J.\} and Yee, \{D. S.\} and Noh, \{S. K.\} and Shin, \{J. H.\} and Park, \{K. H.\} and Park, \{D. W.\} and Kim, \{Jin S.\} and Kim, \{Jong S.\}",
year = "2011",
doi = "10.1063/1.3666677",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "921--922",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}