The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Guan Bo Lin; Xiaoguang Zhang; Soo Min Lee; George Papasouliotis; Jong Kyu Kim; E. Fred Schubert; Jaehee Cho

doi:10.1016/j.cap.2015.07.009

The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Guan Bo Lin
, Xiaoguang Zhang
, Soo Min Lee
, George Papasouliotis
, Jong Kyu Kim
, E. Fred Schubert
, Jaehee Cho^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Veeco MOCVD Operations
Pohang University of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

Light-emitting diodes (LEDs) with a Mg-doped p-type Ga_1-xIn_xN (0x 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga_1-xIn_xN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm² is obtained when inserting a 5 nm-thick p-type Ga_0.97In_0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.

Original language	English
Pages (from-to)	1222-1225
Number of pages	4
Journal	Current Applied Physics
Volume	15
Issue number	10
DOIs	https://doi.org/10.1016/j.cap.2015.07.009
State	Published - 2015.10.4

Keywords

Efficiency droop
Light-emitting diode
MOCVD
Nitride semiconductor

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1016/j.cap.2015.07.009

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@article{48a6a063bd05415b9f8b9de86d703bcd,

title = "The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes",

abstract = "Light-emitting diodes (LEDs) with a Mg-doped p-type Ga1-xInxN (0x 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga1-xInxN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12\% at 111 A/cm2 is obtained when inserting a 5 nm-thick p-type Ga0.97In0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.",

keywords = "Efficiency droop, Light-emitting diode, MOCVD, Nitride semiconductor",

author = "Lin, \{Guan Bo\} and Xiaoguang Zhang and Lee, \{Soo Min\} and George Papasouliotis and Kim, \{Jong Kyu\} and Schubert, \{E. Fred\} and Jaehee Cho",

year = "2015",

month = oct,

day = "4",

doi = "10.1016/j.cap.2015.07.009",

language = "English",

volume = "15",

pages = "1222--1225",

journal = "Current Applied Physics",

issn = "1567-1739",

number = "10",

}

TY - JOUR

T1 - The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

AU - Lin, Guan Bo

AU - Zhang, Xiaoguang

AU - Lee, Soo Min

AU - Papasouliotis, George

AU - Kim, Jong Kyu

AU - Schubert, E. Fred

AU - Cho, Jaehee

PY - 2015/10/4

Y1 - 2015/10/4

N2 - Light-emitting diodes (LEDs) with a Mg-doped p-type Ga1-xInxN (0x 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga1-xInxN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm2 is obtained when inserting a 5 nm-thick p-type Ga0.97In0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.

AB - Light-emitting diodes (LEDs) with a Mg-doped p-type Ga1-xInxN (0x 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga1-xInxN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm2 is obtained when inserting a 5 nm-thick p-type Ga0.97In0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.

KW - Efficiency droop

KW - Light-emitting diode

KW - MOCVD

KW - Nitride semiconductor

UR - https://www.scopus.com/pages/publications/84940789130

U2 - 10.1016/j.cap.2015.07.009

DO - 10.1016/j.cap.2015.07.009

M3 - Journal article

AN - SCOPUS:84940789130

SN - 1567-1739

VL - 15

SP - 1222

EP - 1225

JO - Current Applied Physics

JF - Current Applied Physics

IS - 10

ER -

The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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