The characterization of ZnSe/GaAs epilayers grown by hot wall epitaxy

ZnSe/GaAs, ZnSe : Zn/GaAs, ZnSe:Zn/GaAs (annealed in Zn vapor) and ZnSe/GaAs (annealed in Se vapor) epilayers on (100) GaAs substrates have been grown by hot wall epitaxy under various growth conditions. X-ray double crystal rocking curves and photoluminescence measurements confirmed the good quality of the grown epilayers. The X-ray rocking curves show a FWHM value for the 0.37 μm thick ZnSe epilayer of 161 arcsec and a lattice mismatch between the (100) ZnSe epilayer and the (100) GaAs substrate of 0.27%. Photoluminescence studies indicate that the origin of the I₂ peak at 2.794 eV is associated with V_Se at a neutral donor. It is also confirmed that the binding energy of the bound exciton (D⁰, X), E^b_BX, is 14 meV and the binding energy, E_D, is 70 meV.