The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device

Jinhee Kim; Ju Jin Kim; Sangchul Oh; Jeong O. Lee; Kyung Hwa Yoo; Se Il Park; Kyu Tae Kim

doi:10.1016/S0921-4526(99)03040-9

The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device

Jinhee Kim
, Ju Jin Kim^*
, Sangchul Oh
, Jeong O. Lee
, Kyung Hwa Yoo
, Se Il Park
, Kyu Tae Kim

^*Corresponding author for this work

Department of Physics

Korea Research Institute of Standards and Science
Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

Abstract

The electric and the magnetic transport properties of the loop-type Al/Al₂O₃/Al single-electron tunneling device were studied. Even for the sample with charging energy about one order of magnitude greater than the Josephson coupling energy, the magnetoresistance showed h/2e-oscillation at low bias voltage, attributed to the phase-coherent pair tunneling. The behavior of the magnetoresistance depends on the gate voltage, showing large and noiseless oscillations with the even number of excess charges but small and noisy oscillations with the odd number of excess charges in the metal islands.

Original language	English
Pages (from-to)	1830-1831
Number of pages	2
Journal	Physica B: Physics of Condensed Matter
Volume	284-288
Issue number	PART II
DOIs	https://doi.org/10.1016/S0921-4526(99)03040-9
State	Published - 2000

Keywords

Coulomb blockade
Josephson effect
Single-electron transistor
Single-electron tunneling

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

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10.1016/S0921-4526(99)03040-9

Cite this

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title = "The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device",

abstract = "The electric and the magnetic transport properties of the loop-type Al/Al2O3/Al single-electron tunneling device were studied. Even for the sample with charging energy about one order of magnitude greater than the Josephson coupling energy, the magnetoresistance showed h/2e-oscillation at low bias voltage, attributed to the phase-coherent pair tunneling. The behavior of the magnetoresistance depends on the gate voltage, showing large and noiseless oscillations with the even number of excess charges but small and noisy oscillations with the odd number of excess charges in the metal islands.",

keywords = "Coulomb blockade, Josephson effect, Single-electron transistor, Single-electron tunneling",

author = "Jinhee Kim and Kim, \{Ju Jin\} and Sangchul Oh and Lee, \{Jeong O.\} and Yoo, \{Kyung Hwa\} and Park, \{Se Il\} and Kim, \{Kyu Tae\}",

year = "2000",

doi = "10.1016/S0921-4526(99)03040-9",

language = "English",

volume = "284-288",

pages = "1830--1831",

journal = "Physica B: Physics of Condensed Matter",

issn = "0921-4526",

number = "PART II",

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TY - JOUR

T1 - The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device

AU - Kim, Jinhee

AU - Kim, Ju Jin

AU - Oh, Sangchul

AU - Lee, Jeong O.

AU - Yoo, Kyung Hwa

AU - Park, Se Il

AU - Kim, Kyu Tae

PY - 2000

Y1 - 2000

N2 - The electric and the magnetic transport properties of the loop-type Al/Al2O3/Al single-electron tunneling device were studied. Even for the sample with charging energy about one order of magnitude greater than the Josephson coupling energy, the magnetoresistance showed h/2e-oscillation at low bias voltage, attributed to the phase-coherent pair tunneling. The behavior of the magnetoresistance depends on the gate voltage, showing large and noiseless oscillations with the even number of excess charges but small and noisy oscillations with the odd number of excess charges in the metal islands.

AB - The electric and the magnetic transport properties of the loop-type Al/Al2O3/Al single-electron tunneling device were studied. Even for the sample with charging energy about one order of magnitude greater than the Josephson coupling energy, the magnetoresistance showed h/2e-oscillation at low bias voltage, attributed to the phase-coherent pair tunneling. The behavior of the magnetoresistance depends on the gate voltage, showing large and noiseless oscillations with the even number of excess charges but small and noisy oscillations with the odd number of excess charges in the metal islands.

KW - Coulomb blockade

KW - Josephson effect

KW - Single-electron transistor

KW - Single-electron tunneling

UR - https://www.scopus.com/pages/publications/0033703548

U2 - 10.1016/S0921-4526(99)03040-9

DO - 10.1016/S0921-4526(99)03040-9

M3 - Journal article

AN - SCOPUS:0033703548

SN - 0921-4526

VL - 284-288

SP - 1830

EP - 1831

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - PART II

ER -

The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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