The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN

V. Rajagopal Reddy; N. Ramesha Reddy; Chel Jong Choi

doi:10.1088/0268-1242/21/12/044

The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN

V. Rajagopal Reddy^*
, N. Ramesha Reddy
, Chel Jong Choi

^*Corresponding author for this work

Department of Semiconductor Science and Technology

University of Mysore
Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

10 Scopus citations

Abstract

The effect of thermal annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN (∼4 × 10 ¹⁷ cm^-3) has been investigated by current-voltage (I-V), capacitance-voltage (C-V), x-ray diffraction (XRD) and Auger electron microscopy (AES). Calculations showed that the Schottky barrier height of the as-deposited Rh/Au contact was 0.57 eV (I-V) and 0.62 eV (C-V), respectively. However, the Schottky barrier height increased with annealing temperature up to 500 °C, reaching maximum values of 0.84 eV (I-V) and 1.05 eV (C-V). Based on the Auger electron microscopy and x-ray diffraction results, the formation of gallide phases at the Rh/Au/n-GaN interface could be the reason for the increase of Schottky barrier heights after annealing at temperatures 400 °C and 500 °C.

Original language	English
Article number	044
Pages (from-to)	1753-1757
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	21
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/21/12/044
State	Published - 2006.12.1

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@article{3f98ef2147b04801a7101cad19a65e96,

title = "The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN",

abstract = "The effect of thermal annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN (∼4 × 10 17 cm-3) has been investigated by current-voltage (I-V), capacitance-voltage (C-V), x-ray diffraction (XRD) and Auger electron microscopy (AES). Calculations showed that the Schottky barrier height of the as-deposited Rh/Au contact was 0.57 eV (I-V) and 0.62 eV (C-V), respectively. However, the Schottky barrier height increased with annealing temperature up to 500 °C, reaching maximum values of 0.84 eV (I-V) and 1.05 eV (C-V). Based on the Auger electron microscopy and x-ray diffraction results, the formation of gallide phases at the Rh/Au/n-GaN interface could be the reason for the increase of Schottky barrier heights after annealing at temperatures 400 °C and 500 °C.",

author = "Reddy, \{V. Rajagopal\} and Reddy, \{N. Ramesha\} and Choi, \{Chel Jong\}",

year = "2006",

month = dec,

day = "1",

doi = "10.1088/0268-1242/21/12/044",

language = "English",

volume = "21",

pages = "1753--1757",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

number = "12",

}

TY - JOUR

T1 - The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN

AU - Reddy, V. Rajagopal

AU - Reddy, N. Ramesha

AU - Choi, Chel Jong

PY - 2006/12/1

Y1 - 2006/12/1

N2 - The effect of thermal annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN (∼4 × 10 17 cm-3) has been investigated by current-voltage (I-V), capacitance-voltage (C-V), x-ray diffraction (XRD) and Auger electron microscopy (AES). Calculations showed that the Schottky barrier height of the as-deposited Rh/Au contact was 0.57 eV (I-V) and 0.62 eV (C-V), respectively. However, the Schottky barrier height increased with annealing temperature up to 500 °C, reaching maximum values of 0.84 eV (I-V) and 1.05 eV (C-V). Based on the Auger electron microscopy and x-ray diffraction results, the formation of gallide phases at the Rh/Au/n-GaN interface could be the reason for the increase of Schottky barrier heights after annealing at temperatures 400 °C and 500 °C.

AB - The effect of thermal annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN (∼4 × 10 17 cm-3) has been investigated by current-voltage (I-V), capacitance-voltage (C-V), x-ray diffraction (XRD) and Auger electron microscopy (AES). Calculations showed that the Schottky barrier height of the as-deposited Rh/Au contact was 0.57 eV (I-V) and 0.62 eV (C-V), respectively. However, the Schottky barrier height increased with annealing temperature up to 500 °C, reaching maximum values of 0.84 eV (I-V) and 1.05 eV (C-V). Based on the Auger electron microscopy and x-ray diffraction results, the formation of gallide phases at the Rh/Au/n-GaN interface could be the reason for the increase of Schottky barrier heights after annealing at temperatures 400 °C and 500 °C.

UR - https://www.scopus.com/pages/publications/33846860624

U2 - 10.1088/0268-1242/21/12/044

DO - 10.1088/0268-1242/21/12/044

M3 - Journal article

AN - SCOPUS:33846860624

SN - 0268-1242

VL - 21

SP - 1753

EP - 1757

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

M1 - 044

ER -

The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN

Abstract

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