The effect of nanoscale nonuniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices

Hokyung Park; Minseok Jo; Hyejung Choi; Musarrat Hasan; Rino Choi; Paul D. Kirsch; Chang Young Kang; Byoung Hun Lee; Tae Wook Kim; Takhee Lee; Hyunsang Hwang

doi:10.1109/LED.2007.911992

The effect of nanoscale nonuniformity of oxygen vacancy on electrical and reliability characteristics of HfO₂ MOSFET devices

Hokyung Park^*
, Minseok Jo
, Hyejung Choi
, Musarrat Hasan
, Rino Choi
, Paul D. Kirsch
, Chang Young Kang
, Byoung Hun Lee
, Tae Wook Kim
, Takhee Lee
, Hyunsang Hwang

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Gwangju Institute of Science and Technology
Inha University
SEMATECH

Research output: Contribution to journal › Journal article › peer-review

17 Scopus citations

Abstract

To understand the influence of oxygen vacancies in HfO₂ on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO₂ with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement using the C-AFM. Similar observations were made in various ostdeposition annealing ambients to investigate the generation and reduction of oxygen vacancy in HfO₂. With optimized postdeposition annealing for oxygen vacancy, significantly reduced charge trapping was observed in HfO₂ nMOSFET.

Original language	English
Pages (from-to)	54-56
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	1
DOIs	https://doi.org/10.1109/LED.2007.911992
State	Published - 2008.01

Keywords

Charge trapping
Conducting atomic force microscopy (C-AFM)
Hafnium oxide
Oxygen vacancy

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title = "The effect of nanoscale nonuniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices",

abstract = "To understand the influence of oxygen vacancies in HfO2 on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO2 with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement using the C-AFM. Similar observations were made in various ostdeposition annealing ambients to investigate the generation and reduction of oxygen vacancy in HfO2. With optimized postdeposition annealing for oxygen vacancy, significantly reduced charge trapping was observed in HfO2 nMOSFET.",

keywords = "Charge trapping, Conducting atomic force microscopy (C-AFM), Hafnium oxide, Oxygen vacancy",

author = "Hokyung Park and Minseok Jo and Hyejung Choi and Musarrat Hasan and Rino Choi and Kirsch, \{Paul D.\} and Kang, \{Chang Young\} and Lee, \{Byoung Hun\} and Kim, \{Tae Wook\} and Takhee Lee and Hyunsang Hwang",

year = "2008",

month = jan,

doi = "10.1109/LED.2007.911992",

language = "English",

volume = "29",

pages = "54--56",

journal = "IEEE Electron Device Letters",

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TY - JOUR

T1 - The effect of nanoscale nonuniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices

AU - Park, Hokyung

AU - Jo, Minseok

AU - Choi, Hyejung

AU - Hasan, Musarrat

AU - Choi, Rino

AU - Kirsch, Paul D.

AU - Kang, Chang Young

AU - Lee, Byoung Hun

AU - Kim, Tae Wook

AU - Lee, Takhee

AU - Hwang, Hyunsang

PY - 2008/1

Y1 - 2008/1

N2 - To understand the influence of oxygen vacancies in HfO2 on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO2 with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement using the C-AFM. Similar observations were made in various ostdeposition annealing ambients to investigate the generation and reduction of oxygen vacancy in HfO2. With optimized postdeposition annealing for oxygen vacancy, significantly reduced charge trapping was observed in HfO2 nMOSFET.

AB - To understand the influence of oxygen vacancies in HfO2 on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO2 with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement using the C-AFM. Similar observations were made in various ostdeposition annealing ambients to investigate the generation and reduction of oxygen vacancy in HfO2. With optimized postdeposition annealing for oxygen vacancy, significantly reduced charge trapping was observed in HfO2 nMOSFET.

KW - Charge trapping

KW - Conducting atomic force microscopy (C-AFM)

KW - Hafnium oxide

KW - Oxygen vacancy

UR - https://www.scopus.com/pages/publications/37649007605

U2 - 10.1109/LED.2007.911992

DO - 10.1109/LED.2007.911992

M3 - Journal article

AN - SCOPUS:37649007605

SN - 0741-3106

VL - 29

SP - 54

EP - 56

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -

The effect of nanoscale nonuniformity of oxygen vacancy on electrical and reliability characteristics of HfO₂ MOSFET devices

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Keywords

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