@inproceedings{41477595fc54425ba0d061e505293595,
title = "The effects of HT Al-preseeding and HT AlN buffer layer on structural and optical properties of GaN grown on Si(111) substrates",
abstract = "The effects of high temperature (HT) Al-preseeding process and HT AlN buffer layer on the properties of GaN grown on Si(111) substrates has been investigated. X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) measurement were used to determine the structural and optical properties on the subsequent GaN epilayer. A nearly 2.5 μm, crack-free GaN epilayer was obtained with a 120-nm-thick AlN buffer layer grown at a TMAl source flow rate of 18 μmol/min and an Al-preseeding time of 5 sec. The near-band edge emission peak with a full width at half maximum (FWHM) value of 44.93 meV at room temperature (RT) and a (002) X-ray rocking curve with a 385 arcsec linewidth attests to the high quality of GaN on the Si(111) substrate.",
keywords = "AlN buffer layer, GaN, MOCVD, Si(111) substrate",
author = "Kim, \{J. O.\} and Hong, \{S. K.\} and H. Kim and Choi, \{C. J.\} and Lim, \{K. Y.\}",
year = "2011",
doi = "10.1063/1.3666274",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "97--98",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}