The effects of postdeposition annealing on the crystallization and electrical characteristics of HfO2 and ZrO2 gate dielectrics

Hyung Suk Jung; Jae Hyuck Jang; Deok Yong Cho; Sang Ho Jeon; Hyo Kyeom Kim; Sang Young Lee; Cheol Seong Hwang

doi:10.1149/1.3551460

The effects of postdeposition annealing on the crystallization and electrical characteristics of HfO₂ and ZrO₂ gate dielectrics

Hyung Suk Jung^*
, Jae Hyuck Jang
, Deok Yong Cho
, Sang Ho Jeon
, Hyo Kyeom Kim
, Sang Young Lee
, Cheol Seong Hwang

^*Corresponding author for this work

Department of Physics

Seoul National University

Research output: Contribution to journal › Journal article › peer-review

30 Scopus citations

Abstract

This study examined the effects of postdeposition annealing (PDA) on the electrical characteristics of atomic layer deposited ZrO₂ and HfO₂ films using similar precursors and process conditions. After PDA at 600°C, the insulating properties of ZrO₂ improved but those of HfO₂ deteriorated. The improved insulating properties of ZrO ₂ were attributed to the negligible increase in the interfacial layer thickness and an amorphous to tetragonal phase transformation. In addition, the degraded insulating properties of HfO₂ after PDA at high temperatures were attributed to an abrupt increase in the interfacial layer thickness and the generation of conducting paths through the grain boundaries.

Original language	English
Pages (from-to)	G17-G19
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	5
DOIs	https://doi.org/10.1149/1.3551460
State	Published - 2011

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title = "The effects of postdeposition annealing on the crystallization and electrical characteristics of HfO2 and ZrO2 gate dielectrics",

abstract = "This study examined the effects of postdeposition annealing (PDA) on the electrical characteristics of atomic layer deposited ZrO2 and HfO2 films using similar precursors and process conditions. After PDA at 600°C, the insulating properties of ZrO2 improved but those of HfO2 deteriorated. The improved insulating properties of ZrO 2 were attributed to the negligible increase in the interfacial layer thickness and an amorphous to tetragonal phase transformation. In addition, the degraded insulating properties of HfO2 after PDA at high temperatures were attributed to an abrupt increase in the interfacial layer thickness and the generation of conducting paths through the grain boundaries.",

author = "Jung, \{Hyung Suk\} and Jang, \{Jae Hyuck\} and Cho, \{Deok Yong\} and Jeon, \{Sang Ho\} and Kim, \{Hyo Kyeom\} and Lee, \{Sang Young\} and Hwang, \{Cheol Seong\}",

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doi = "10.1149/1.3551460",

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T1 - The effects of postdeposition annealing on the crystallization and electrical characteristics of HfO2 and ZrO2 gate dielectrics

AU - Jung, Hyung Suk

AU - Jang, Jae Hyuck

AU - Cho, Deok Yong

AU - Jeon, Sang Ho

AU - Kim, Hyo Kyeom

AU - Lee, Sang Young

AU - Hwang, Cheol Seong

PY - 2011

Y1 - 2011

N2 - This study examined the effects of postdeposition annealing (PDA) on the electrical characteristics of atomic layer deposited ZrO2 and HfO2 films using similar precursors and process conditions. After PDA at 600°C, the insulating properties of ZrO2 improved but those of HfO2 deteriorated. The improved insulating properties of ZrO 2 were attributed to the negligible increase in the interfacial layer thickness and an amorphous to tetragonal phase transformation. In addition, the degraded insulating properties of HfO2 after PDA at high temperatures were attributed to an abrupt increase in the interfacial layer thickness and the generation of conducting paths through the grain boundaries.

AB - This study examined the effects of postdeposition annealing (PDA) on the electrical characteristics of atomic layer deposited ZrO2 and HfO2 films using similar precursors and process conditions. After PDA at 600°C, the insulating properties of ZrO2 improved but those of HfO2 deteriorated. The improved insulating properties of ZrO 2 were attributed to the negligible increase in the interfacial layer thickness and an amorphous to tetragonal phase transformation. In addition, the degraded insulating properties of HfO2 after PDA at high temperatures were attributed to an abrupt increase in the interfacial layer thickness and the generation of conducting paths through the grain boundaries.

UR - https://www.scopus.com/pages/publications/79952511556

U2 - 10.1149/1.3551460

DO - 10.1149/1.3551460

M3 - Journal article

AN - SCOPUS:79952511556

SN - 1099-0062

VL - 14

SP - G17-G19

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 5

ER -

The effects of postdeposition annealing on the crystallization and electrical characteristics of HfO₂ and ZrO₂ gate dielectrics

Abstract

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