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The effects of the ZnTe capping layer thickness on the optical and electronic properties in CdTeZnTe quantum dots

  • H. S. Lee
  • , H. L. Park
  • , T. W. Kim*
  • *Corresponding author for this work
  • Yonsei University
  • Hanyang University

Research output: Contribution to journalJournal articlepeer-review

Abstract

Photoluminescence spectra showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E1 -H H1) in the CdTeZnTe quantum dots (QDs) was shifted to a higher energy with increasing thickness of the ZnTe cap layer. The intensity of the excitonic peak related to the E1 -H H1 transition for the CdTeZnTe QDs increased with increasing thickness of the ZnTe cap layer. The activation energy of the electrons confined in the CdTeZnTe QDs increased with increasing thickness of the ZnTe cap layer.

Original languageEnglish
Article number052108
JournalApplied Physics Letters
Volume92
Issue number5
DOIs
StatePublished - 2008

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