The enhancement of Q factor in RPCVD SiGe varactors by the structural modification of the base-collector junction

Bongki Mheen; Dongwoo Suh; Sang Hoon Kim; Kyu Hwan Shim; Jin Yeong Kang; Songcheol Hong

doi:10.1109/LED.2003.810878

The enhancement of Q factor in RPCVD SiGe varactors by the structural modification of the base-collector junction

Bongki Mheen^*
, Dongwoo Suh
, Sang Hoon Kim
, Kyu Hwan Shim
, Jin Yeong Kang
, Songcheol Hong

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Letter › peer-review

3 Scopus citations

Abstract

We designed two silicon germanium (SiGe) varactors enhanced in Q factor through a structural modification by using a cost-effective SiGe heterostructure bipolar transistor (HBT) process, a conventional reduced-pressure chemical vapor deposition (RPCVD). As a result, the suggested structures showed a superiority in Q factor (160/GHz/pF at 2.5 GHz) to the conventional one (70/GHz/pF), even with neither a change in process nor an additional mask. We attributed the enhancement of Q factor to the structural feature of the varactors and quantitatively analyzed it with a lumped element model.

Original language	English
Pages (from-to)	239-241
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	4
DOIs	https://doi.org/10.1109/LED.2003.810878
State	Published - 2003.04

Keywords

Quality (Q) factor
RPCVD
SiGe HBT
SiGe varactor

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10.1109/LED.2003.810878

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@article{b596190cf0844539a8aa6a7cac597c9f,

title = "The enhancement of Q factor in RPCVD SiGe varactors by the structural modification of the base-collector junction",

abstract = "We designed two silicon germanium (SiGe) varactors enhanced in Q factor through a structural modification by using a cost-effective SiGe heterostructure bipolar transistor (HBT) process, a conventional reduced-pressure chemical vapor deposition (RPCVD). As a result, the suggested structures showed a superiority in Q factor (160/GHz/pF at 2.5 GHz) to the conventional one (70/GHz/pF), even with neither a change in process nor an additional mask. We attributed the enhancement of Q factor to the structural feature of the varactors and quantitatively analyzed it with a lumped element model.",

keywords = "Quality (Q) factor, RPCVD, SiGe HBT, SiGe varactor",

author = "Bongki Mheen and Dongwoo Suh and Kim, \{Sang Hoon\} and Shim, \{Kyu Hwan\} and Kang, \{Jin Yeong\} and Songcheol Hong",

year = "2003",

month = apr,

doi = "10.1109/LED.2003.810878",

language = "English",

volume = "24",

pages = "239--241",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "4",

}

TY - JOUR

T1 - The enhancement of Q factor in RPCVD SiGe varactors by the structural modification of the base-collector junction

AU - Mheen, Bongki

AU - Suh, Dongwoo

AU - Kim, Sang Hoon

AU - Shim, Kyu Hwan

AU - Kang, Jin Yeong

AU - Hong, Songcheol

PY - 2003/4

Y1 - 2003/4

N2 - We designed two silicon germanium (SiGe) varactors enhanced in Q factor through a structural modification by using a cost-effective SiGe heterostructure bipolar transistor (HBT) process, a conventional reduced-pressure chemical vapor deposition (RPCVD). As a result, the suggested structures showed a superiority in Q factor (160/GHz/pF at 2.5 GHz) to the conventional one (70/GHz/pF), even with neither a change in process nor an additional mask. We attributed the enhancement of Q factor to the structural feature of the varactors and quantitatively analyzed it with a lumped element model.

AB - We designed two silicon germanium (SiGe) varactors enhanced in Q factor through a structural modification by using a cost-effective SiGe heterostructure bipolar transistor (HBT) process, a conventional reduced-pressure chemical vapor deposition (RPCVD). As a result, the suggested structures showed a superiority in Q factor (160/GHz/pF at 2.5 GHz) to the conventional one (70/GHz/pF), even with neither a change in process nor an additional mask. We attributed the enhancement of Q factor to the structural feature of the varactors and quantitatively analyzed it with a lumped element model.

KW - Quality (Q) factor

KW - RPCVD

KW - SiGe HBT

KW - SiGe varactor

UR - https://www.scopus.com/pages/publications/0038104349

U2 - 10.1109/LED.2003.810878

DO - 10.1109/LED.2003.810878

M3 - Letter

AN - SCOPUS:0038104349

SN - 0741-3106

VL - 24

SP - 239

EP - 241

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

The enhancement of Q factor in RPCVD SiGe varactors by the structural modification of the base-collector junction

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Keywords

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