The impact of carbon concentration on the crystalline phase and dielectric constant of atomic layer deposited HfO2 films on Ge substrate

Hyung Suk Jung; Sang Ho Jeon; Hyo Kyeom Kim; Il Hyuk Yu; Sang Young Lee; Joohwi Lee; Yoon Jang Chung; Deok Yong Cho; Nae In Lee; Tae Joo Park; Jung Hae Choi; Seungwu Han; Cheol Seong Hwang

doi:10.1149/2.020202jss

The impact of carbon concentration on the crystalline phase and dielectric constant of atomic layer deposited HfO₂ films on Ge substrate

Hyung Suk Jung
, Sang Ho Jeon
, Hyo Kyeom Kim
, Il Hyuk Yu
, Sang Young Lee
, Joohwi Lee
, Yoon Jang Chung
, Deok Yong Cho
, Nae In Lee
, Tae Joo Park
, Jung Hae Choi
, Seungwu Han
, Cheol Seong Hwang

Department of Physics

Seoul National University
Samsung
Hanyang University
Korea Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

37 Scopus citations

Abstract

The effect of the carbon concentration on the crystalline phase and dielectric constant (k) of atomic layer deposited HfO₂ films on Ge substrate was investigated. After annealing, the HfO₂ films grown at 200°C and 280°C were crystallized to the tetragonal (t) and monoclinic (m) phases, respectively, which was related to the carbon contents within the films and grain boundary energy. To clarify this, the energy difference between a t- and a m- phases (ΔE_tetra) was calculated by first principles calculations. The higher k value of t-HfO₂ compared to amorphous and monoclinic HfO₂ was experimentally confirmed.

Original language	English
Pages (from-to)	N33-N37
Journal	ECS Journal of Solid State Science and Technology
Volume	1
Issue number	2
DOIs	https://doi.org/10.1149/2.020202jss
State	Published - 2012

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Jung, H. S., Jeon, S. H., Kim, H. K., Yu, I. H., Lee, S. Y., Lee, J., Chung, Y. J., Cho, D. Y., Lee, N. I., Park, T. J., Choi, J. H., Han, S., & Hwang, C. S. (2012). The impact of carbon concentration on the crystalline phase and dielectric constant of atomic layer deposited HfO₂ films on Ge substrate. ECS Journal of Solid State Science and Technology, 1(2), N33-N37. https://doi.org/10.1149/2.020202jss

@article{5b2db1cc017241b4b5b32ccc571a667c,

title = "The impact of carbon concentration on the crystalline phase and dielectric constant of atomic layer deposited HfO2 films on Ge substrate",

abstract = "The effect of the carbon concentration on the crystalline phase and dielectric constant (k) of atomic layer deposited HfO2 films on Ge substrate was investigated. After annealing, the HfO2 films grown at 200°C and 280°C were crystallized to the tetragonal (t) and monoclinic (m) phases, respectively, which was related to the carbon contents within the films and grain boundary energy. To clarify this, the energy difference between a t- and a m- phases (ΔEtetra) was calculated by first principles calculations. The higher k value of t-HfO2 compared to amorphous and monoclinic HfO2 was experimentally confirmed.",

author = "Jung, \{Hyung Suk\} and Jeon, \{Sang Ho\} and Kim, \{Hyo Kyeom\} and Yu, \{Il Hyuk\} and Lee, \{Sang Young\} and Joohwi Lee and Chung, \{Yoon Jang\} and Cho, \{Deok Yong\} and Lee, \{Nae In\} and Park, \{Tae Joo\} and Choi, \{Jung Hae\} and Seungwu Han and Hwang, \{Cheol Seong\}",

year = "2012",

doi = "10.1149/2.020202jss",

language = "English",

volume = "1",

pages = "N33--N37",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

number = "2",

}

Jung, HS, Jeon, SH, Kim, HK, Yu, IH, Lee, SY, Lee, J, Chung, YJ, Cho, DY, Lee, NI, Park, TJ, Choi, JH, Han, S & Hwang, CS 2012, 'The impact of carbon concentration on the crystalline phase and dielectric constant of atomic layer deposited HfO₂ films on Ge substrate', ECS Journal of Solid State Science and Technology, vol. 1, no. 2, pp. N33-N37. https://doi.org/10.1149/2.020202jss

TY - JOUR

T1 - The impact of carbon concentration on the crystalline phase and dielectric constant of atomic layer deposited HfO2 films on Ge substrate

AU - Jung, Hyung Suk

AU - Jeon, Sang Ho

AU - Kim, Hyo Kyeom

AU - Yu, Il Hyuk

AU - Lee, Sang Young

AU - Lee, Joohwi

AU - Chung, Yoon Jang

AU - Cho, Deok Yong

AU - Lee, Nae In

AU - Park, Tae Joo

AU - Choi, Jung Hae

AU - Han, Seungwu

AU - Hwang, Cheol Seong

PY - 2012

Y1 - 2012

N2 - The effect of the carbon concentration on the crystalline phase and dielectric constant (k) of atomic layer deposited HfO2 films on Ge substrate was investigated. After annealing, the HfO2 films grown at 200°C and 280°C were crystallized to the tetragonal (t) and monoclinic (m) phases, respectively, which was related to the carbon contents within the films and grain boundary energy. To clarify this, the energy difference between a t- and a m- phases (ΔEtetra) was calculated by first principles calculations. The higher k value of t-HfO2 compared to amorphous and monoclinic HfO2 was experimentally confirmed.

AB - The effect of the carbon concentration on the crystalline phase and dielectric constant (k) of atomic layer deposited HfO2 films on Ge substrate was investigated. After annealing, the HfO2 films grown at 200°C and 280°C were crystallized to the tetragonal (t) and monoclinic (m) phases, respectively, which was related to the carbon contents within the films and grain boundary energy. To clarify this, the energy difference between a t- and a m- phases (ΔEtetra) was calculated by first principles calculations. The higher k value of t-HfO2 compared to amorphous and monoclinic HfO2 was experimentally confirmed.

UR - https://www.scopus.com/pages/publications/84866725508

U2 - 10.1149/2.020202jss

DO - 10.1149/2.020202jss

M3 - Journal article

AN - SCOPUS:84866725508

SN - 2162-8769

VL - 1

SP - N33-N37

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 2

ER -

The impact of carbon concentration on the crystalline phase and dielectric constant of atomic layer deposited HfO₂ films on Ge substrate

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