The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

Min Suk Oh

doi:10.1007/s11664-017-6046-z

The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

Min Suk Oh^*

^*Corresponding author for this work

Metallurgical System Engineering

Korea Institute of Industrial Technology

Research output: Contribution to journal › Journal article › peer-review

Abstract

We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO (N_d = 4.3 × 10¹⁷ cm⁻³). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10⁻⁴ ∼ 4.8 × 10⁻⁴ Ω cm² depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10⁻² Ω cm². X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

Original language	English
Pages (from-to)	2257-2262
Number of pages	6
Journal	Journal of Electronic Materials
Volume	47
Issue number	4
DOIs	https://doi.org/10.1007/s11664-017-6046-z
State	Published - 2018.04.1

Keywords

electrode
homogenized excimer laser
II–VI compound semiconductor
ohmic contact
surface modification
thin film

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10.1007/s11664-017-6046-z

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@article{258792a733a34a50b4f13ab13421f888,

title = "The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment",

abstract = "We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO (Nd = 4.3 × 1017 cm−3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10−4 ∼ 4.8 × 10−4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10−2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.",

keywords = "electrode, homogenized excimer laser, II–VI compound semiconductor, ohmic contact, surface modification, thin film",

author = "Oh, \{Min Suk\}",

note = "Publisher Copyright: {\textcopyright} 2018, The Minerals, Metals \& Materials Society.",

year = "2018",

month = apr,

day = "1",

doi = "10.1007/s11664-017-6046-z",

language = "English",

volume = "47",

pages = "2257--2262",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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TY - JOUR

T1 - The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

AU - Oh, Min Suk

PY - 2018/4/1

Y1 - 2018/4/1

N2 - We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO (Nd = 4.3 × 1017 cm−3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10−4 ∼ 4.8 × 10−4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10−2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

AB - We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO (Nd = 4.3 × 1017 cm−3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10−4 ∼ 4.8 × 10−4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10−2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

KW - electrode

KW - homogenized excimer laser

KW - II–VI compound semiconductor

KW - ohmic contact

KW - surface modification

KW - thin film

UR - https://www.scopus.com/pages/publications/85042695909

U2 - 10.1007/s11664-017-6046-z

DO - 10.1007/s11664-017-6046-z

M3 - Journal article

AN - SCOPUS:85042695909

SN - 0361-5235

VL - 47

SP - 2257

EP - 2262

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

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Keywords

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