The preparation of oxygenated fullerene film and its photoelectrical properties

In studies of photoelectrochemical properties of C₆₀ thin films, researchers have pointed out that the presence of oxygen in C₆₀ thin films causes problems in electron and hole drift mobilities as well as in the recombination lifetime at a moderate steady-state illumination level; therefore, it is necessary to understand the characterization of photoelectronic and transport processes in oxygenated C₆₀ thin films. From previous studies, researchers have pointed out that C₆₀ fullerene thin film has the n-type property. Therefore, by using oxygenated C₆₀ fullerene thin film, we prepared p-n junctions (C₆₀/p-Si) in order to obtain its photoelectronic conversion properties. We analyzed the conductivity, the I-V curves, the open-circuit voltage and close-circuit current versus film thickness, and the fill factor and conversion efficiency. As a result, we found the photoelectronic conversion properties of the p-n junctions (C₆₀/p-Si). However, the photoelectronic properties of n-type C₆₀ fullerene thin film are lower than the characteristics of other photoelectronic devices. Those that have low photoelectronic conversion properties have the possibility of being good photoelectronic devices. Therefore, C₆₀ fullerene thin film can be applied to photoelectronic device fields.