The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

Jinhee Kim; Sangchul Oh; Ju Jin Kim; Jeong O. Lee; Jong Wan Park; Kyung Hwa Yoo; Hyuk Chan Kwon

doi:10.1016/S0921-4526(99)02983-X

The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

Jinhee Kim
, Sangchul Oh
, Ju Jin Kim^*
, Jeong O. Lee
, Jong Wan Park
, Kyung Hwa Yoo
, Hyuk Chan Kwon

^*Corresponding author for this work

Department of Physics

Korea Research Institute of Standards and Science
Jeonbuk National University
Chungbuk National University

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

The electric transport properties of an Al/Al₂O₃/Ni/Al₂O₃/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.

Original language	English
Pages (from-to)	1794-1795
Number of pages	2
Journal	Physica B: Physics of Condensed Matter
Volume	284-288
Issue number	PART II
DOIs	https://doi.org/10.1016/S0921-4526(99)02983-X
State	Published - 2000

Keywords

Coulomb blockade
Ferromagnetic tunnel junction
Single electron transistor
Single electron tunneling

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

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10.1016/S0921-4526(99)02983-X

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@article{85e2350e0595454a9a17dc41b32f6492,

title = "The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor",

abstract = "The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.",

keywords = "Coulomb blockade, Ferromagnetic tunnel junction, Single electron transistor, Single electron tunneling",

author = "Jinhee Kim and Sangchul Oh and Kim, \{Ju Jin\} and Lee, \{Jeong O.\} and Park, \{Jong Wan\} and Yoo, \{Kyung Hwa\} and Kwon, \{Hyuk Chan\}",

year = "2000",

doi = "10.1016/S0921-4526(99)02983-X",

language = "English",

volume = "284-288",

pages = "1794--1795",

journal = "Physica B: Physics of Condensed Matter",

issn = "0921-4526",

number = "PART II",

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T1 - The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

AU - Kim, Jinhee

AU - Oh, Sangchul

AU - Kim, Ju Jin

AU - Lee, Jeong O.

AU - Park, Jong Wan

AU - Yoo, Kyung Hwa

AU - Kwon, Hyuk Chan

PY - 2000

Y1 - 2000

N2 - The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.

AB - The electric transport properties of an Al/Al2O3/Ni/Al2O3/Al single-electron transistor were studied. Compared to the all-normal-metal single-electron transistors, our sample showed enhanced tunnel current inside the Coulomb gap both in the superconducting and the normal state of the Al. The tunnel current showed sharp increase for the magnetic field H ≈ ± 1.57 T, which also was evidenced by the change of current-voltage (I-V) characteristics with the magnetic field.

KW - Coulomb blockade

KW - Ferromagnetic tunnel junction

KW - Single electron transistor

KW - Single electron tunneling

UR - https://www.scopus.com/pages/publications/0033706094

U2 - 10.1016/S0921-4526(99)02983-X

DO - 10.1016/S0921-4526(99)02983-X

M3 - Journal article

AN - SCOPUS:0033706094

SN - 0921-4526

VL - 284-288

SP - 1794

EP - 1795

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - PART II

ER -

The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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