The temperature-dependent electrical transport mechanism of single ZnO nanorods

Jae Young Park; Hwangyou Oh; Ju Jin Kim; Sang Sub Kim

doi:10.1088/0957-4484/17/5/016

The temperature-dependent electrical transport mechanism of single ZnO nanorods

Jae Young Park
, Hwangyou Oh
, Ju Jin Kim
, Sang Sub Kim^*

^*Corresponding author for this work

Department of Physics

Chonnam National University
Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

16 Scopus citations

Abstract

The electrical transport properties of high quality ZnO nanorods, synthesized by catalyst-free metalorganic chemical vapour deposition, were studied as a function of temperature by fabricating field effect transistors based on single ZnO nanorods. The thermally activated Schottky emission was found to be a ruling transport mechanism in the temperature regime of 70-293 K over a wide range of electric fields with an effective barrier height of ∼120 meV. In contrast, the Fowler-Nordheim tunnelling dominated at low temperatures (<70 K) under very high electric fields.

Original language	English
Pages (from-to)	1255-1259
Number of pages	5
Journal	Nanotechnology
Volume	17
Issue number	5
DOIs	https://doi.org/10.1088/0957-4484/17/5/016
State	Published - 2006.03.14

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Mechanical
Engineering - Electrical & Electronic
Engineering - Petroleum
Engineering - Chemical
Chemistry

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10.1088/0957-4484/17/5/016

Cite this

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title = "The temperature-dependent electrical transport mechanism of single ZnO nanorods",

abstract = "The electrical transport properties of high quality ZnO nanorods, synthesized by catalyst-free metalorganic chemical vapour deposition, were studied as a function of temperature by fabricating field effect transistors based on single ZnO nanorods. The thermally activated Schottky emission was found to be a ruling transport mechanism in the temperature regime of 70-293 K over a wide range of electric fields with an effective barrier height of ∼120 meV. In contrast, the Fowler-Nordheim tunnelling dominated at low temperatures (<70 K) under very high electric fields.",

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AU - Park, Jae Young

AU - Oh, Hwangyou

AU - Kim, Ju Jin

AU - Kim, Sang Sub

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Y1 - 2006/3/14

N2 - The electrical transport properties of high quality ZnO nanorods, synthesized by catalyst-free metalorganic chemical vapour deposition, were studied as a function of temperature by fabricating field effect transistors based on single ZnO nanorods. The thermally activated Schottky emission was found to be a ruling transport mechanism in the temperature regime of 70-293 K over a wide range of electric fields with an effective barrier height of ∼120 meV. In contrast, the Fowler-Nordheim tunnelling dominated at low temperatures (<70 K) under very high electric fields.

AB - The electrical transport properties of high quality ZnO nanorods, synthesized by catalyst-free metalorganic chemical vapour deposition, were studied as a function of temperature by fabricating field effect transistors based on single ZnO nanorods. The thermally activated Schottky emission was found to be a ruling transport mechanism in the temperature regime of 70-293 K over a wide range of electric fields with an effective barrier height of ∼120 meV. In contrast, the Fowler-Nordheim tunnelling dominated at low temperatures (<70 K) under very high electric fields.

UR - https://www.scopus.com/pages/publications/33144490689

U2 - 10.1088/0957-4484/17/5/016

DO - 10.1088/0957-4484/17/5/016

M3 - Journal article

AN - SCOPUS:33144490689

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JO - Nanotechnology

JF - Nanotechnology

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ER -

The temperature-dependent electrical transport mechanism of single ZnO nanorods

Abstract

Quacquarelli Symonds(QS) Subject Topics

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