Thermal escape and carrier dynamics in multilayer CdTe/ZnTe quantum dots

Sung Hwan Jin; Su Hwan Kim; Minh Tan Man; Jin Chul Choi; Hong Seok Lee

doi:10.1016/j.jallcom.2017.11.374

Thermal escape and carrier dynamics in multilayer CdTe/ZnTe quantum dots

Sung Hwan Jin
, Su Hwan Kim
, Minh Tan Man
, Jin Chul Choi
, Hong Seok Lee^*

^*Corresponding author for this work

Department of Physics

Yonsei University Wonju
Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

We present an optical spectroscopy study of multilayer CdTe/ZnTe quantum dots by photoluminescence (PL) and time-resolved PL. We demonstrate that the PL blueshift and enhanced PL intensity were due to an increase in the material intermixing and the density of the emitting states. An integrated PL as a function of temperature revealed that the separated energy of two different states was 4.5–6.2 meV and was nearly independent of the stack period. The main thermal escape was assisted by multi-longitudinal optical phonons at high temperature with activation energies in the range 48–54 meV.

Original language	English
Pages (from-to)	2119-2122
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	735
DOIs	https://doi.org/10.1016/j.jallcom.2017.11.374
State	Published - 2018.02.25

Keywords

Cadmium telluride
Carriers dynamics
Multilayer quantum dots
Thermal escape

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Mechanical

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10.1016/j.jallcom.2017.11.374

Cite this

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title = "Thermal escape and carrier dynamics in multilayer CdTe/ZnTe quantum dots",

abstract = "We present an optical spectroscopy study of multilayer CdTe/ZnTe quantum dots by photoluminescence (PL) and time-resolved PL. We demonstrate that the PL blueshift and enhanced PL intensity were due to an increase in the material intermixing and the density of the emitting states. An integrated PL as a function of temperature revealed that the separated energy of two different states was 4.5–6.2 meV and was nearly independent of the stack period. The main thermal escape was assisted by multi-longitudinal optical phonons at high temperature with activation energies in the range 48–54 meV.",

keywords = "Cadmium telluride, Carriers dynamics, Multilayer quantum dots, Thermal escape",

author = "Jin, \{Sung Hwan\} and Kim, \{Su Hwan\} and Man, \{Minh Tan\} and Choi, \{Jin Chul\} and Lee, \{Hong Seok\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = feb,

day = "25",

doi = "10.1016/j.jallcom.2017.11.374",

language = "English",

volume = "735",

pages = "2119--2122",

journal = "Journal of Alloys and Compounds",

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TY - JOUR

T1 - Thermal escape and carrier dynamics in multilayer CdTe/ZnTe quantum dots

AU - Jin, Sung Hwan

AU - Kim, Su Hwan

AU - Man, Minh Tan

AU - Choi, Jin Chul

AU - Lee, Hong Seok

PY - 2018/2/25

Y1 - 2018/2/25

N2 - We present an optical spectroscopy study of multilayer CdTe/ZnTe quantum dots by photoluminescence (PL) and time-resolved PL. We demonstrate that the PL blueshift and enhanced PL intensity were due to an increase in the material intermixing and the density of the emitting states. An integrated PL as a function of temperature revealed that the separated energy of two different states was 4.5–6.2 meV and was nearly independent of the stack period. The main thermal escape was assisted by multi-longitudinal optical phonons at high temperature with activation energies in the range 48–54 meV.

AB - We present an optical spectroscopy study of multilayer CdTe/ZnTe quantum dots by photoluminescence (PL) and time-resolved PL. We demonstrate that the PL blueshift and enhanced PL intensity were due to an increase in the material intermixing and the density of the emitting states. An integrated PL as a function of temperature revealed that the separated energy of two different states was 4.5–6.2 meV and was nearly independent of the stack period. The main thermal escape was assisted by multi-longitudinal optical phonons at high temperature with activation energies in the range 48–54 meV.

KW - Cadmium telluride

KW - Carriers dynamics

KW - Multilayer quantum dots

KW - Thermal escape

UR - https://www.scopus.com/pages/publications/85037375494

U2 - 10.1016/j.jallcom.2017.11.374

DO - 10.1016/j.jallcom.2017.11.374

M3 - Journal article

AN - SCOPUS:85037375494

SN - 0925-8388

VL - 735

SP - 2119

EP - 2122

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Thermal escape and carrier dynamics in multilayer CdTe/ZnTe quantum dots

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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