Thermal plasma synthesis of Si/SiC nanoparticles from silicon and activated carbon powders

In this study, Si/SiC nanocomposites were synthesized by non-transferred arc thermal plasma processing of micron-sized SiC powder. First, micron-sized SiC was synthesized by solid-state method where waste silicon (Si) and activated carbon (C) powder were used as precursor materials. The effect of Si/C mole ratio and solid-state synthesis temperature on structural and phase formation of SiC was investigated. Diffraction pattern confirmed the formation of SiC at 1300 °C. High C content was required for the synthesis of pure SiC as Si remained unreacted when Si/C mole ratio was below 1/1.5. Highly agglomerated micron-size (0.6–10 µm) SiC particles were formed after solid-state synthesis. Thermal plasma processing of solid-state synthesized micron-sized SiC resulted into the formation of uniformly dispersed (20–60 nm) Si/SiC nanoparticles. It was proposed that Si/SiC nanocomposites were formed due to partial decomposition of SiC during high temperature plasma processing. The formation of Si/SiC nanoparticles from micron-sized SiC was resulted from dissociation of grains from their grain boundary during plasma processing.