Thermal stability of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films

Sung Yong Chang; Myeong Il Jeong; S. V. Jagadeesh Chandra; Yong Boo Lee; Hyo Bong Hong; V. Rajagopal Reddy; Chel Jong Choi

doi:10.1016/j.mssp.2009.06.001

Thermal stability of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO₂ films

Sung Yong Chang
, Myeong Il Jeong
, S. V. Jagadeesh Chandra
, Yong Boo Lee
, Hyo Bong Hong
, V. Rajagopal Reddy
, Chel Jong Choi^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Korea Electric Power
Jeonbuk National University
Korea Basic Science Institute
Electronics and Telecommunications Research Institute
Sri Venkateswara University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

We fabricated a high-k Er-silicate gate dielectric using interfacial reaction between Er and SiO₂ films and investigated its thermal stability. The reduced capacitance with increasing annealing temperature is associated with the chemical bonding change of Er-silicate from Er-rich to Si-rich, induced by a reaction between Er-silicate and Si during thermal treatment. Further an increase in the annealing temperature (>500 °C) causes the formation of Si dangling bonds, which is responsible for an increased interface trap density.

Original language	English
Pages (from-to)	122-125
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	11
Issue number	4
DOIs	https://doi.org/10.1016/j.mssp.2009.06.001
State	Published - 2008.08

Keywords

EOT
Er-silicate
High-k
Interface trap density
Interfacial reaction

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Mechanical
Physics & Astronomy

Access to Document

10.1016/j.mssp.2009.06.001

Cite this

@article{5876127df0eb410fbf75fdd4bdeac97f,

title = "Thermal stability of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films",

abstract = "We fabricated a high-k Er-silicate gate dielectric using interfacial reaction between Er and SiO2 films and investigated its thermal stability. The reduced capacitance with increasing annealing temperature is associated with the chemical bonding change of Er-silicate from Er-rich to Si-rich, induced by a reaction between Er-silicate and Si during thermal treatment. Further an increase in the annealing temperature (>500 °C) causes the formation of Si dangling bonds, which is responsible for an increased interface trap density.",

keywords = "EOT, Er-silicate, High-k, Interface trap density, Interfacial reaction",

author = "Chang, \{Sung Yong\} and Jeong, \{Myeong Il\} and \{Jagadeesh Chandra\}, \{S. V.\} and Lee, \{Yong Boo\} and Hong, \{Hyo Bong\} and \{Rajagopal Reddy\}, V. and Choi, \{Chel Jong\}",

year = "2008",

month = aug,

doi = "10.1016/j.mssp.2009.06.001",

language = "English",

volume = "11",

pages = "122--125",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

number = "4",

}

TY - JOUR

T1 - Thermal stability of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films

AU - Chang, Sung Yong

AU - Jeong, Myeong Il

AU - Jagadeesh Chandra, S. V.

AU - Lee, Yong Boo

AU - Hong, Hyo Bong

AU - Rajagopal Reddy, V.

AU - Choi, Chel Jong

PY - 2008/8

Y1 - 2008/8

N2 - We fabricated a high-k Er-silicate gate dielectric using interfacial reaction between Er and SiO2 films and investigated its thermal stability. The reduced capacitance with increasing annealing temperature is associated with the chemical bonding change of Er-silicate from Er-rich to Si-rich, induced by a reaction between Er-silicate and Si during thermal treatment. Further an increase in the annealing temperature (>500 °C) causes the formation of Si dangling bonds, which is responsible for an increased interface trap density.

AB - We fabricated a high-k Er-silicate gate dielectric using interfacial reaction between Er and SiO2 films and investigated its thermal stability. The reduced capacitance with increasing annealing temperature is associated with the chemical bonding change of Er-silicate from Er-rich to Si-rich, induced by a reaction between Er-silicate and Si during thermal treatment. Further an increase in the annealing temperature (>500 °C) causes the formation of Si dangling bonds, which is responsible for an increased interface trap density.

KW - EOT

KW - Er-silicate

KW - High-k

KW - Interface trap density

KW - Interfacial reaction

UR - https://www.scopus.com/pages/publications/67650544390

U2 - 10.1016/j.mssp.2009.06.001

DO - 10.1016/j.mssp.2009.06.001

M3 - Journal article

AN - SCOPUS:67650544390

SN - 1369-8001

VL - 11

SP - 122

EP - 125

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 4

ER -