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Thermally activated current transport in MgB2 films

  • S. Patnaik*
  • , A. Gurevich
  • , S. D. Bu
  • , S. D. Kaushik
  • , J. Choi
  • , C. B. Eom
  • , D. C. Larbalestier
  • *Corresponding author for this work
  • University of Wisconsin-Madison
  • Jawaharlal Nehru University

Research output: Contribution to journalJournal articlepeer-review

Abstract

Thermally-activated flux flow (TAFF) resistivity above the irreversibility field Bi is reported for two different c-axis textured MgB 2 superconducting films. Transport measurements at different perpendicular magnetic fields 0<B<9 T and temperatures from 5 to 40 K reveal TAFF Ohmic resistivity ρ(T,B) for B>Bi described by the Arrhenius law, ρ=ρ0 exp(-U/T) with the quadratic field dependence of the activation energy, U(B,T) = U0(T)[1-B/B c2(T)]2. Our transport measurements on bulk MgB 2 ceramic samples also show the TAFF behavior, but do not show the quadratic field dependence of U(T,B). We explain our data in terms of thermally-activated drift of pre-existing quenched dislocations in the vortex lattice. Our results indicate that thermal fluctuations can be essential in determining the irreversibility field in MgB2 though to a much lesser extent than in high-temperature superconductors.

Original languageEnglish
Article number064503
Pages (from-to)064503-1-064503-8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number6
DOIs
StatePublished - 2004.08

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