Thermally oxidized GaN film for use as gate insulators

Hyunsoo Kim; Seong Ju Park; Hyunsang Hwang

doi:10.1116/1.1349733

Thermally oxidized GaN film for use as gate insulators

Hyunsoo Kim
, Seong Ju Park
, Hyunsang Hwang^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

83 Scopus citations

Abstract

The characteristics of the thermal oxide of GaN film were investigated for MOS gate dielectric applications. Based on XRD, AES, and SEM studies, the formation of monoclinic β-Ga₂O₃ with 88 nm thickness was confirmed.

Original language	English
Pages (from-to)	579-581
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	2
DOIs	https://doi.org/10.1116/1.1349733
State	Published - 2001.03

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10.1116/1.1349733

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title = "Thermally oxidized GaN film for use as gate insulators",

abstract = "The characteristics of the thermal oxide of GaN film were investigated for MOS gate dielectric applications. Based on XRD, AES, and SEM studies, the formation of monoclinic β-Ga2O3 with 88 nm thickness was confirmed.",

author = "Hyunsoo Kim and Park, \{Seong Ju\} and Hyunsang Hwang",

year = "2001",

month = mar,

doi = "10.1116/1.1349733",

language = "English",

volume = "19",

pages = "579--581",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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TY - JOUR

T1 - Thermally oxidized GaN film for use as gate insulators

AU - Kim, Hyunsoo

AU - Park, Seong Ju

AU - Hwang, Hyunsang

PY - 2001/3

Y1 - 2001/3

N2 - The characteristics of the thermal oxide of GaN film were investigated for MOS gate dielectric applications. Based on XRD, AES, and SEM studies, the formation of monoclinic β-Ga2O3 with 88 nm thickness was confirmed.

AB - The characteristics of the thermal oxide of GaN film were investigated for MOS gate dielectric applications. Based on XRD, AES, and SEM studies, the formation of monoclinic β-Ga2O3 with 88 nm thickness was confirmed.

UR - https://www.scopus.com/pages/publications/0035269474

U2 - 10.1116/1.1349733

DO - 10.1116/1.1349733

M3 - Journal article

AN - SCOPUS:0035269474

SN - 1071-1023

VL - 19

SP - 579

EP - 581

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

Thermally oxidized GaN film for use as gate insulators

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