Thickness fluctuation relations in carrier dynamics of CdTe/ZnTe quantum dots

Minh Tan Man; Tae Whan Kim; Hong Seok Lee

doi:10.1016/j.jlumin.2016.05.050

Thickness fluctuation relations in carrier dynamics of CdTe/ZnTe quantum dots

Minh Tan Man
, Tae Whan Kim
, Hong Seok Lee^*

^*Corresponding author for this work

Department of Physics

Jeonbuk National University
Hanyang University

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

We investigated the influence of thickness fluctuations on the carrier dynamics of CdTe/ZnTe quantum dots (QDs). The temperature dependence of both the red-shift in the band-edge transition energy and broadening of the emission line were evaluated using different models. We showed that the quantum confinement effect and thermal escape of the QDs can be extended to significantly higher temperatures. These results were confirmed by using the discrete recombination model to investigate localized and delocalized states. Taking place into the reducing fluctuations of QDs that the thermally activated transition energies and the carrier scattering via phonons are enhanced.

Original language	English
Pages (from-to)	84-88
Number of pages	5
Journal	Journal of Luminescence
Volume	178
DOIs	https://doi.org/10.1016/j.jlumin.2016.05.050
State	Published - 2016.10.1

Keywords

Carrier confinement
Discrete recombination
Phonon interaction
Quantum dots
Thermal escape

Quacquarelli Symonds(QS) Subject Topics

Chemistry
Physics & Astronomy
Biological Sciences

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10.1016/j.jlumin.2016.05.050

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title = "Thickness fluctuation relations in carrier dynamics of CdTe/ZnTe quantum dots",

abstract = "We investigated the influence of thickness fluctuations on the carrier dynamics of CdTe/ZnTe quantum dots (QDs). The temperature dependence of both the red-shift in the band-edge transition energy and broadening of the emission line were evaluated using different models. We showed that the quantum confinement effect and thermal escape of the QDs can be extended to significantly higher temperatures. These results were confirmed by using the discrete recombination model to investigate localized and delocalized states. Taking place into the reducing fluctuations of QDs that the thermally activated transition energies and the carrier scattering via phonons are enhanced.",

keywords = "Carrier confinement, Discrete recombination, Phonon interaction, Quantum dots, Thermal escape",

author = "Man, \{Minh Tan\} and Kim, \{Tae Whan\} and Lee, \{Hong Seok\}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2016",

month = oct,

day = "1",

doi = "10.1016/j.jlumin.2016.05.050",

language = "English",

volume = "178",

pages = "84--88",

journal = "Journal of Luminescence",

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TY - JOUR

T1 - Thickness fluctuation relations in carrier dynamics of CdTe/ZnTe quantum dots

AU - Man, Minh Tan

AU - Kim, Tae Whan

AU - Lee, Hong Seok

PY - 2016/10/1

Y1 - 2016/10/1

N2 - We investigated the influence of thickness fluctuations on the carrier dynamics of CdTe/ZnTe quantum dots (QDs). The temperature dependence of both the red-shift in the band-edge transition energy and broadening of the emission line were evaluated using different models. We showed that the quantum confinement effect and thermal escape of the QDs can be extended to significantly higher temperatures. These results were confirmed by using the discrete recombination model to investigate localized and delocalized states. Taking place into the reducing fluctuations of QDs that the thermally activated transition energies and the carrier scattering via phonons are enhanced.

AB - We investigated the influence of thickness fluctuations on the carrier dynamics of CdTe/ZnTe quantum dots (QDs). The temperature dependence of both the red-shift in the band-edge transition energy and broadening of the emission line were evaluated using different models. We showed that the quantum confinement effect and thermal escape of the QDs can be extended to significantly higher temperatures. These results were confirmed by using the discrete recombination model to investigate localized and delocalized states. Taking place into the reducing fluctuations of QDs that the thermally activated transition energies and the carrier scattering via phonons are enhanced.

KW - Carrier confinement

KW - Discrete recombination

KW - Phonon interaction

KW - Quantum dots

KW - Thermal escape

UR - https://www.scopus.com/pages/publications/84989830030

U2 - 10.1016/j.jlumin.2016.05.050

DO - 10.1016/j.jlumin.2016.05.050

M3 - Journal article

AN - SCOPUS:84989830030

SN - 0022-2313

VL - 178

SP - 84

EP - 88

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Thickness fluctuation relations in carrier dynamics of CdTe/ZnTe quantum dots

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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