Three-dimensional integration of organic resistive memory devices

Sunghoon Song; Byungjin Cho; Tae Wook Kim; Yongsung Ji; Minseok Jo; Gunuk Wang; Minhyeok Choe; Yung Ho Kahng; Hyunsang Hwang; Takhee Lee

doi:10.1002/adma.201002575

Three-dimensional integration of organic resistive memory devices

Sunghoon Song
, Byungjin Cho
, Tae Wook Kim
, Yongsung Ji
, Minseok Jo
, Gunuk Wang
, Minhyeok Choe
, Yung Ho Kahng
, Hyunsang Hwang
, Takhee Lee^*

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Gwangju Institute of Science and Technology
University of Washington

Research output: Contribution to journal › Journal article › peer-review

227 Scopus citations

Abstract

Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

Original language	English
Pages (from-to)	5048-5052
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	44
DOIs	https://doi.org/10.1002/adma.201002575
State	Published - 2010.11.24

Keywords

3-dimensional stacking
Non-volatile memory
Organic electronics
Organic memory

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10.1002/adma.201002575

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@article{b85ca44d1bfd4801a0c468d70be311f8,

title = "Three-dimensional integration of organic resistive memory devices",

abstract = "Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.",

keywords = "3-dimensional stacking, Non-volatile memory, Organic electronics, Organic memory",

author = "Sunghoon Song and Byungjin Cho and Kim, \{Tae Wook\} and Yongsung Ji and Minseok Jo and Gunuk Wang and Minhyeok Choe and Kahng, \{Yung Ho\} and Hyunsang Hwang and Takhee Lee",

year = "2010",

month = nov,

day = "24",

doi = "10.1002/adma.201002575",

language = "English",

volume = "22",

pages = "5048--5052",

journal = "Advanced Materials",

issn = "0935-9648",

number = "44",

}

TY - JOUR

T1 - Three-dimensional integration of organic resistive memory devices

AU - Song, Sunghoon

AU - Cho, Byungjin

AU - Kim, Tae Wook

AU - Ji, Yongsung

AU - Jo, Minseok

AU - Wang, Gunuk

AU - Choe, Minhyeok

AU - Kahng, Yung Ho

AU - Hwang, Hyunsang

AU - Lee, Takhee

PY - 2010/11/24

Y1 - 2010/11/24

N2 - Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

AB - Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

KW - 3-dimensional stacking

KW - Non-volatile memory

KW - Organic electronics

KW - Organic memory

UR - https://www.scopus.com/pages/publications/78649854244

U2 - 10.1002/adma.201002575

DO - 10.1002/adma.201002575

M3 - Journal article

C2 - 20839254

AN - SCOPUS:78649854244

SN - 0935-9648

VL - 22

SP - 5048

EP - 5052

JO - Advanced Materials

JF - Advanced Materials

IS - 44

ER -

Three-dimensional integration of organic resistive memory devices

Abstract

Keywords

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