Threshold voltage tuning technique in Gate-All-Around MOSFETs by utilizing gate electrode with potential distribution

Jun Young Park; Hagyoul Bae; Dong Il Moon; Chang Hoon Jeon; Yang Kyu Choi

doi:10.1109/LED.2016.2612653

Threshold voltage tuning technique in Gate-All-Around MOSFETs by utilizing gate electrode with potential distribution

Jun Young Park
, Hagyoul Bae
, Dong Il Moon
, Chang Hoon Jeon
, Yang Kyu Choi

Division of Electronic Engineering

Korea Advanced Institute of Science and Technology
NASA Ames Research Center
Samsung

Research output: Contribution to journal › Journal article › peer-review

7 Scopus citations

Abstract

A technique for achieving tunable threshold voltage (V_TH) is investigated in a gate-All-Around device, which is a representative floating body structure. For this concept, the in-plane gate is designed to be both a driving gate and a control gate. The control gate governs the potential distribution along the gate electrode, which acts as a built-in voltage divider in the MOSFET. During the V_TH tuning by the control gate, there is no electrical performance degradation, and modulation of V_TH follows a nearly perfect linear tendency. The results are verified by the electrical measurements of the fabricated device and a multi-physics simulator.

Original language	English
Article number	7574270
Pages (from-to)	1391-1394
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	11
DOIs	https://doi.org/10.1109/LED.2016.2612653
State	Published - 2016.11

Keywords

Gate-All-Around (GAA)
MOSFET
Nanowire transistor
Tunable threshold voltage

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10.1109/LED.2016.2612653

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@article{e75705bab9fb43b182cb69f016a90f13,

title = "Threshold voltage tuning technique in Gate-All-Around MOSFETs by utilizing gate electrode with potential distribution",

abstract = "A technique for achieving tunable threshold voltage (VTH) is investigated in a gate-All-Around device, which is a representative floating body structure. For this concept, the in-plane gate is designed to be both a driving gate and a control gate. The control gate governs the potential distribution along the gate electrode, which acts as a built-in voltage divider in the MOSFET. During the VTH tuning by the control gate, there is no electrical performance degradation, and modulation of VTH follows a nearly perfect linear tendency. The results are verified by the electrical measurements of the fabricated device and a multi-physics simulator.",

keywords = "Gate-All-Around (GAA), MOSFET, Nanowire transistor, Tunable threshold voltage",

author = "Park, \{Jun Young\} and Hagyoul Bae and Moon, \{Dong Il\} and Jeon, \{Chang Hoon\} and Choi, \{Yang Kyu\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = nov,

doi = "10.1109/LED.2016.2612653",

language = "English",

volume = "37",

pages = "1391--1394",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "11",

}

TY - JOUR

T1 - Threshold voltage tuning technique in Gate-All-Around MOSFETs by utilizing gate electrode with potential distribution

AU - Park, Jun Young

AU - Bae, Hagyoul

AU - Moon, Dong Il

AU - Jeon, Chang Hoon

AU - Choi, Yang Kyu

PY - 2016/11

Y1 - 2016/11

N2 - A technique for achieving tunable threshold voltage (VTH) is investigated in a gate-All-Around device, which is a representative floating body structure. For this concept, the in-plane gate is designed to be both a driving gate and a control gate. The control gate governs the potential distribution along the gate electrode, which acts as a built-in voltage divider in the MOSFET. During the VTH tuning by the control gate, there is no electrical performance degradation, and modulation of VTH follows a nearly perfect linear tendency. The results are verified by the electrical measurements of the fabricated device and a multi-physics simulator.

AB - A technique for achieving tunable threshold voltage (VTH) is investigated in a gate-All-Around device, which is a representative floating body structure. For this concept, the in-plane gate is designed to be both a driving gate and a control gate. The control gate governs the potential distribution along the gate electrode, which acts as a built-in voltage divider in the MOSFET. During the VTH tuning by the control gate, there is no electrical performance degradation, and modulation of VTH follows a nearly perfect linear tendency. The results are verified by the electrical measurements of the fabricated device and a multi-physics simulator.

KW - Gate-All-Around (GAA)

KW - MOSFET

KW - Nanowire transistor

KW - Tunable threshold voltage

UR - https://www.scopus.com/pages/publications/84994626525

U2 - 10.1109/LED.2016.2612653

DO - 10.1109/LED.2016.2612653

M3 - Journal article

AN - SCOPUS:84994626525

SN - 0741-3106

VL - 37

SP - 1391

EP - 1394

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 7574270

ER -

Threshold voltage tuning technique in Gate-All-Around MOSFETs by utilizing gate electrode with potential distribution

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Keywords

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