Abstract
Using the selective area epitaxy technique, we have demonstrated nanowire emitters with controlled diameter, position, and emission wavelength. Furthermore, monolithic integration of multicolor emission and photonic crystal structure are realized, which allows for ultimately small multicolor nano-LEDs and micro-LEDs with emission properties tailored by the photonic crystal, as well as surface emitting lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 784-787 |
| Number of pages | 4 |
| Journal | Proceedings of the International Display Workshops |
| Volume | 27 |
| State | Published - 2021.12.9 |
| Event | 27th International Display Workshops, IDW 2020 - Virtual, Online Duration: 2020.12.9 → 2020.12.11 |
Keywords
- GaN
- Laser diode
- Micro-LED
- Molecular beam epitaxy
- Nanostructure
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