Skip to main navigation Skip to search Skip to main content

Toward ultrahigh efficiency GaN nano and micro full-color LEDs

  • Zetian Mi*
  • , Xianhe Liu
  • , Yuanpeng Wu
  • , Yi Sun
  • , Yakshita Malhotra
  • , Yong Ho Ra
  • *Corresponding author for this work
  • University of Michigan, Ann Arbor
  • Korea Institute of Ceramic Engineering And Technology

Research output: Contribution to journalConference articlepeer-review

Abstract

Using the selective area epitaxy technique, we have demonstrated nanowire emitters with controlled diameter, position, and emission wavelength. Furthermore, monolithic integration of multicolor emission and photonic crystal structure are realized, which allows for ultimately small multicolor nano-LEDs and micro-LEDs with emission properties tailored by the photonic crystal, as well as surface emitting lasers.

Original languageEnglish
Pages (from-to)784-787
Number of pages4
JournalProceedings of the International Display Workshops
Volume27
StatePublished - 2021.12.9
Event27th International Display Workshops, IDW 2020 - Virtual, Online
Duration: 2020.12.92020.12.11

Keywords

  • GaN
  • Laser diode
  • Micro-LED
  • Molecular beam epitaxy
  • Nanostructure

Fingerprint

Dive into the research topics of 'Toward ultrahigh efficiency GaN nano and micro full-color LEDs'. Together they form a unique fingerprint.

Cite this