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Twistable nonvolatile organic resistive memory devices

  • Sunghoon Song
  • , Jingon Jang
  • , Yongsung Ji
  • , Sungjun Park
  • , Tae Wook Kim
  • , Younggul Song
  • , Myung Han Yoon
  • , Heung Cho Ko
  • , Gun Young Jung
  • , Takhee Lee*
  • *Corresponding author for this work
  • Gwangju Institute of Science and Technology
  • Samsung
  • Seoul National University
  • Korea Institute of Science and Technology

Research output: Contribution to journalJournal articlepeer-review

Abstract

We fabricated an 8 × 8 cross-bar array-type organic nonvolatile memory devices on twistable poly(ethylene terephthalate) (PET) substrate. A composite of polyimide (PI) and 6-phenyl-C61 butyric acid methyl ester (PCBM) was used as the active material for the memory devices. The organic memory devices showed a high ON/OFF current ratio, reproducibility with good endurance cycle, and stability with long retention time over 5 × 104 s on the flat substrate. The device performance remained well under the twisted condition with a twist angle up to ∼30. The twistable organic memory device has a potential to be utilized in more complex flexible organic device configurations.

Original languageEnglish
Pages (from-to)2087-2092
Number of pages6
JournalOrganic Electronics
Volume14
Issue number8
DOIs
StatePublished - 2013

Keywords

  • Nonvolatile
  • Organic memory
  • Resistive memory
  • Twistable

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