Two-dimensional dopant profiling in POCl 3-diffused n+ emitter of textured silicon solar cells

  • Chel Jong Choi*
  • , Jin Sung Kim
  • , Kyungwon Moon
  • , Yeon Ho Kil
  • , Young Woo Ok
  • , Ajeet Rohatgi
  • , Sung Eun Park
  • , Dong Hwan Kim
  • *Corresponding author for this work

Research output: Contribution to conferenceConference paperpeer-review

Abstract

We investigated two-dimensional dopant distribution in POCl 3-diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependency of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages2858-2860
Number of pages3
DOIs
StatePublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 2011.06.192011.06.24

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/TerritoryUnited States
CitySeattle, WA
Period11.06.1911.06.24

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Quacquarelli Symonds(QS) Subject Topics

  • Engineering - Mechanical
  • Computer Science & Information Systems
  • Engineering - Electrical & Electronic
  • Engineering - Petroleum

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