Abstract
We investigated two-dimensional dopant distribution in POCl 3-diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependency of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.
| Original language | English |
|---|---|
| Title of host publication | Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 |
| Pages | 2858-2860 |
| Number of pages | 3 |
| DOIs | |
| State | Published - 2011 |
| Event | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 2011.06.19 → 2011.06.24 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Conference
| Conference | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 |
|---|---|
| Country/Territory | United States |
| City | Seattle, WA |
| Period | 11.06.19 → 11.06.24 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Quacquarelli Symonds(QS) Subject Topics
- Engineering - Mechanical
- Computer Science & Information Systems
- Engineering - Electrical & Electronic
- Engineering - Petroleum
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