Two-Phase Boosted Voltage Generator for Low-Voltage DRAMs

Seong Ik Cho; Jung Hwan Lee; Hong June Park; Gyu Ho Lim; Young Hee Kim

doi:10.1109/JSSC.2003.817592

Two-Phase Boosted Voltage Generator for Low-Voltage DRAMs

Seong Ik Cho^*
, Jung Hwan Lee
, Hong June Park
, Gyu Ho Lim
, Young Hee Kim

^*Corresponding author for this work

Division of Electronic Engineering

SK Corporation
Pohang University of Science and Technology
Changwon National University

Research output: Contribution to journal › Journal article › peer-review

6 Scopus citations

Abstract

A two-phase boosted voltage (V_PP) generator circuit was proposed for use in gigabit DRAMs. It reduced the maximum gate-oxide voltage of pass transistor and the lower limit of supply voltage to V_PP and V_TN, respectively, while those for the conventional charge-pump circuit are V_PP + V_DD and 1.5 V_TN respectively. Also, the pumping current was increased in the new circuit. The newly proposed two-phase V_PP charge-pump circuit worked successfully at V _DD down to 0.8 V by eliminating the threshold voltage loss of the control pulse generator and was tested successfully in a 0.16-μm test chip using triple-well CMOS technology.

Original language	English
Pages (from-to)	1726-1729
Number of pages	4
Journal	IEEE Journal of Solid-State Circuits
Volume	38
Issue number	10
DOIs	https://doi.org/10.1109/JSSC.2003.817592
State	Published - 2003.10

Keywords

Boosted
Charge pump
Gigabit DRAMs
Low voltage
Voltage generator

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10.1109/JSSC.2003.817592

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title = "Two-Phase Boosted Voltage Generator for Low-Voltage DRAMs",

abstract = "A two-phase boosted voltage (VPP) generator circuit was proposed for use in gigabit DRAMs. It reduced the maximum gate-oxide voltage of pass transistor and the lower limit of supply voltage to VPP and VTN, respectively, while those for the conventional charge-pump circuit are VPP + VDD and 1.5 VTN respectively. Also, the pumping current was increased in the new circuit. The newly proposed two-phase VPP charge-pump circuit worked successfully at V DD down to 0.8 V by eliminating the threshold voltage loss of the control pulse generator and was tested successfully in a 0.16-μm test chip using triple-well CMOS technology.",

keywords = "Boosted, Charge pump, Gigabit DRAMs, Low voltage, Voltage generator",

author = "Cho, \{Seong Ik\} and Lee, \{Jung Hwan\} and Park, \{Hong June\} and Lim, \{Gyu Ho\} and Kim, \{Young Hee\}",

year = "2003",

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doi = "10.1109/JSSC.2003.817592",

language = "English",

volume = "38",

pages = "1726--1729",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

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T1 - Two-Phase Boosted Voltage Generator for Low-Voltage DRAMs

AU - Cho, Seong Ik

AU - Lee, Jung Hwan

AU - Park, Hong June

AU - Lim, Gyu Ho

AU - Kim, Young Hee

PY - 2003/10

Y1 - 2003/10

N2 - A two-phase boosted voltage (VPP) generator circuit was proposed for use in gigabit DRAMs. It reduced the maximum gate-oxide voltage of pass transistor and the lower limit of supply voltage to VPP and VTN, respectively, while those for the conventional charge-pump circuit are VPP + VDD and 1.5 VTN respectively. Also, the pumping current was increased in the new circuit. The newly proposed two-phase VPP charge-pump circuit worked successfully at V DD down to 0.8 V by eliminating the threshold voltage loss of the control pulse generator and was tested successfully in a 0.16-μm test chip using triple-well CMOS technology.

AB - A two-phase boosted voltage (VPP) generator circuit was proposed for use in gigabit DRAMs. It reduced the maximum gate-oxide voltage of pass transistor and the lower limit of supply voltage to VPP and VTN, respectively, while those for the conventional charge-pump circuit are VPP + VDD and 1.5 VTN respectively. Also, the pumping current was increased in the new circuit. The newly proposed two-phase VPP charge-pump circuit worked successfully at V DD down to 0.8 V by eliminating the threshold voltage loss of the control pulse generator and was tested successfully in a 0.16-μm test chip using triple-well CMOS technology.

KW - Boosted

KW - Charge pump

KW - Gigabit DRAMs

KW - Low voltage

KW - Voltage generator

UR - https://www.scopus.com/pages/publications/0141886002

U2 - 10.1109/JSSC.2003.817592

DO - 10.1109/JSSC.2003.817592

M3 - Journal article

AN - SCOPUS:0141886002

SN - 0018-9200

VL - 38

SP - 1726

EP - 1729

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 10

ER -

Two-Phase Boosted Voltage Generator for Low-Voltage DRAMs

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Keywords

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