Ultra threshold current lasers

P. Daniel Dapkus; Michael H. MacDougal; Gye Mo Yang; Aaron E. Bond; Chao Kun Lin; Denis Tishinin; Vasily Pudikov; Yong Cheng; Kushant Uppal

Ultra threshold current lasers

P. Daniel Dapkus^*
, Michael H. MacDougal
, Gye Mo Yang
, Aaron E. Bond
, Chao Kun Lin
, Denis Tishinin
, Vasily Pudikov
, Yong Cheng
, Kushant Uppal

^*Corresponding author for this work

Department of Semiconductor Science and Technology

University of Southern California

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ultralow threshold current vertical-cavity surface-emitting lasers (VCSELs) will enable practical laser-based smart pixels. Such devices have emerged through the application of monolithically integrated native oxides of AlGaAs as current constriction and mode control layers and as high-contrast Bragg reflectors. This paper demonstrates and analyzes the role of the oxide in current constriction and optical field control to predict they scaling of VCSELs to microamp thresholds. In addition, an attempt is made to demonstrate and analyze the impact of high-contrast AlAs oxide/GaAs Bragg mirrors formed by selective oxidation on the performance of VCSELs and study the trade-offs in device characteristics that arise from use of electrically insulating mirrors.

Original language	English
Pages (from-to)	357-358
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
State	Published - 1996
Event	Proceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA Duration: 1996.06.2 → 1996.06.7

Cite this

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title = "Ultra threshold current lasers",

abstract = "Ultralow threshold current vertical-cavity surface-emitting lasers (VCSELs) will enable practical laser-based smart pixels. Such devices have emerged through the application of monolithically integrated native oxides of AlGaAs as current constriction and mode control layers and as high-contrast Bragg reflectors. This paper demonstrates and analyzes the role of the oxide in current constriction and optical field control to predict they scaling of VCSELs to microamp thresholds. In addition, an attempt is made to demonstrate and analyze the impact of high-contrast AlAs oxide/GaAs Bragg mirrors formed by selective oxidation on the performance of VCSELs and study the trade-offs in device characteristics that arise from use of electrically insulating mirrors.",

author = "Dapkus, \{P. Daniel\} and MacDougal, \{Michael H.\} and Yang, \{Gye Mo\} and Bond, \{Aaron E.\} and Lin, \{Chao Kun\} and Denis Tishinin and Vasily Pudikov and Yong Cheng and Kushant Uppal",

year = "1996",

language = "English",

pages = "357--358",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

note = "Proceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 ; Conference date: 02-06-1996 Through 07-06-1996",

}

TY - JOUR

T1 - Ultra threshold current lasers

AU - Dapkus, P. Daniel

AU - MacDougal, Michael H.

AU - Yang, Gye Mo

AU - Bond, Aaron E.

AU - Lin, Chao Kun

AU - Tishinin, Denis

AU - Pudikov, Vasily

AU - Cheng, Yong

AU - Uppal, Kushant

PY - 1996

Y1 - 1996

N2 - Ultralow threshold current vertical-cavity surface-emitting lasers (VCSELs) will enable practical laser-based smart pixels. Such devices have emerged through the application of monolithically integrated native oxides of AlGaAs as current constriction and mode control layers and as high-contrast Bragg reflectors. This paper demonstrates and analyzes the role of the oxide in current constriction and optical field control to predict they scaling of VCSELs to microamp thresholds. In addition, an attempt is made to demonstrate and analyze the impact of high-contrast AlAs oxide/GaAs Bragg mirrors formed by selective oxidation on the performance of VCSELs and study the trade-offs in device characteristics that arise from use of electrically insulating mirrors.

AB - Ultralow threshold current vertical-cavity surface-emitting lasers (VCSELs) will enable practical laser-based smart pixels. Such devices have emerged through the application of monolithically integrated native oxides of AlGaAs as current constriction and mode control layers and as high-contrast Bragg reflectors. This paper demonstrates and analyzes the role of the oxide in current constriction and optical field control to predict they scaling of VCSELs to microamp thresholds. In addition, an attempt is made to demonstrate and analyze the impact of high-contrast AlAs oxide/GaAs Bragg mirrors formed by selective oxidation on the performance of VCSELs and study the trade-offs in device characteristics that arise from use of electrically insulating mirrors.

UR - https://www.scopus.com/pages/publications/0029698749

M3 - Conference article

AN - SCOPUS:0029698749

SN - 1092-8081

SP - 357

EP - 358

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96

Y2 - 2 June 1996 through 7 June 1996

ER -

Ultra threshold current lasers

Abstract

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