Ultralow threshold current vertical-cavity surface-emittinglasersobtained with selective oxidation

G. M. Yang; M. H. MacDougal; P. D. Dapkus

doi:10.1049/el:19950610

Ultralow threshold current vertical-cavity surface-emittinglasersobtained with selective oxidation

G. M. Yang
, M. H. MacDougal
, P. D. Dapkus

Department of Semiconductor Science and Technology

University of Southern California

Research output: Contribution to journal › Journal article › peer-review

266 Scopus citations

Abstract

The authors report InGaAs single quantum well vertical-cavity surface-emitting lasers with an intracavity p-contact fabricated by selective oxidation of AlAs and distributed Bragg reflectors composed of binary materials (AlAs/GaAs). Record low threshold currents of 8.7µA in ~3μm square devices and 140µA in 10μm square devices with maximum output powers over 1.2mW are achieved.

Original language	English
Pages (from-to)	886-888
Number of pages	3
Journal	Electronics Letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1049/el:19950610
State	Published - 1995.05.25

Keywords

Oxidation
Vertical cavity surface emitting lasers

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10.1049/el:19950610

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title = "Ultralow threshold current vertical-cavity surface-emittinglasersobtained with selective oxidation",

abstract = "The authors report InGaAs single quantum well vertical-cavity surface-emitting lasers with an intracavity p-contact fabricated by selective oxidation of AlAs and distributed Bragg reflectors composed of binary materials (AlAs/GaAs). Record low threshold currents of 8.7µA in \textasciitilde{}3μm square devices and 140µA in 10μm square devices with maximum output powers over 1.2mW are achieved.",

keywords = "Oxidation, Vertical cavity surface emitting lasers",

author = "Yang, \{G. M.\} and MacDougal, \{M. H.\} and Dapkus, \{P. D.\}",

year = "1995",

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doi = "10.1049/el:19950610",

language = "English",

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journal = "Electronics Letters",

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T1 - Ultralow threshold current vertical-cavity surface-emittinglasersobtained with selective oxidation

AU - Yang, G. M.

AU - MacDougal, M. H.

AU - Dapkus, P. D.

PY - 1995/5/25

Y1 - 1995/5/25

N2 - The authors report InGaAs single quantum well vertical-cavity surface-emitting lasers with an intracavity p-contact fabricated by selective oxidation of AlAs and distributed Bragg reflectors composed of binary materials (AlAs/GaAs). Record low threshold currents of 8.7µA in ~3μm square devices and 140µA in 10μm square devices with maximum output powers over 1.2mW are achieved.

AB - The authors report InGaAs single quantum well vertical-cavity surface-emitting lasers with an intracavity p-contact fabricated by selective oxidation of AlAs and distributed Bragg reflectors composed of binary materials (AlAs/GaAs). Record low threshold currents of 8.7µA in ~3μm square devices and 140µA in 10μm square devices with maximum output powers over 1.2mW are achieved.

KW - Oxidation

KW - Vertical cavity surface emitting lasers

UR - https://www.scopus.com/pages/publications/0029304501

U2 - 10.1049/el:19950610

DO - 10.1049/el:19950610

M3 - Journal article

AN - SCOPUS:0029304501

SN - 0013-5194

VL - 31

SP - 886

EP - 888

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Ultralow threshold current vertical-cavity surface-emittinglasersobtained with selective oxidation

Abstract

Keywords

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