Ultraviolet Light-Based Current-Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in β-Ga₂O₃ FETs

A novel technique is proposed for the simultaneous extraction of energy distribution of donor- and acceptor-like interface trap states [Dit-D(E) and Dit-A (E )] over a wide range of bandgap energy using deep UV light with sub-bandgap (Eph = h < Eg) photons less than the bandgap of the -gallium oxide (-Ga2O3) channel material in the -Ga2O3 field-effect transistors. In the proposed technique,we characterizedDit-D(E ) andDit-A(E ) separately based on the difference in the gate voltage (V GS)-dependent ideality factors [d (V GS)/dV GS] for the photoresponsive carriers excited fromDit-D(E) and Dit-A(E ) under two different regions (V ON < VGS < VFB and V FB < VGS < VT) in the subthreshold operation..