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Unipolar bistable switching of organic non-volatile memory devices with poly(styrene-co-styrenesulfonic acid Na)

  • Yongsung Ji
  • , Byungjin Cho
  • , Sunghoon Song
  • , Minhyeok Choe
  • , Tae Wook Kim
  • , Joon Seop Kim
  • , Byung Sang Choi*
  • , Takhee Lee
  • *Corresponding author for this work
  • Gwangju Institute of Science and Technology
  • Chosun University

Research output: Contribution to journalJournal articlepeer-review

Abstract

We demonstrated unipolar organic bistable memory devices with 8 × 8 cross-bar array type structure. The active material for the organic non-volatile memory devices is poly(styrene-co-styrenesulfonic acid Na) (PSSANa). From the electrical measurements of the PSSANa organic memory devices, we observed rewritable unipolar switching behaviors with a stable endurance and narrow cumulative probability. Also the PSSANa memory devices exhibited a uniform cell-to-cell switching with a high ON/OFF ratio of ∼10 5 and good retention time of ∼10 4 seconds without significant degradation.

Original languageEnglish
Pages (from-to)1385-1388
Number of pages4
JournalJournal of nanoscience and nanotechnology
Volume11
Issue number2
DOIs
StatePublished - 2011.02

Keywords

  • Non-volatile memory
  • Organic memory
  • Unipolar switching

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