Universal surface reaction model of plasma oxide etching

We propose a universal surface reaction model without any ad-hoc assumptions for fluorocarbon (FC) plasma oxide etching. A self-consistent numerical algorithm was developed to predict the deposition and etch yields simultaneously from our model considering the passivation layer and mixed layer. The internal model variables such as surface coverages showed consistent results under a wide range of FC plasma conditions. This model predicts the transition conditions between deposition and etch yield and the FC passivation layer thickness during the etching process. Finally, quantitative verification of the proposed model was performed through comparison to various FC plasma experimental data.