Unveiling quantum geyser dynamics: A breakthrough in light enhancement with InGaN nanorod LED arrays

The relentless drive toward ultra-high-resolution micro-LEDs has been hindered by efficiency losses arising from surface recombination and photon leakage at sub-10-µm dimensions. Overcoming these barriers requires a paradigm shift in photonic engineering. Here, we unveil a breakthrough luminescence enhancement mechanism – termed the “Quantum Geyser Effect” – which harnesses photonic recycling to achieve unprecedented vertical emission efficiency in GaN based nanorod (NR) array LEDs. By leveraging a meticulously optimized cylindrical NR architecture, we demonstrate an 11-fold enhancement in light output, driven by self-optical feedback and spontaneous emission redistribution within the NR array. Experimental micro-PL and time-resolved PL analyses, coupled with 3D finite-difference time-domain (FDTD) simulations, reveal that lateral photon exchange between adjacent NRs fosters robust waveguiding modes, dramatically elevating the Purcell factor and enabling amplified vertical emission. This pioneering work redefines light extraction strategies by transforming leakage losses into self-sustaining luminescence, marking a pivotal leap toward next-generation micro-LEDs for ultra-fine AR/VR displays, high-speed optical communication, and intelligent optoelectronic interfaces.