Unveiling Radiation-Tolerant Thickness in a‑IGZO Thin-Film Transistors with Sub-10 nm Film and Restoring Abnormalities via Energy-Efficient Electrothermal Annealing

Hagyoul Bae

Unveiling Radiation-Tolerant Thickness in a‑IGZO Thin-Film Transistors with Sub-10 nm Film and Restoring Abnormalities via Energy-Efficient Electrothermal Annealing

Hagyoul Bae

Division of Electronic Engineering

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Nano Letters
State	Published - 2025.06.10

Cite this

@article{ff23774bcc7d4a56aa6533eda95e454c,

title = "Unveiling Radiation-Tolerant Thickness in a‑IGZO Thin-Film Transistors with Sub-10 nm Film and Restoring Abnormalities via Energy-Efficient Electrothermal Annealing",

author = "Hagyoul Bae",

year = "2025",

month = jun,

day = "10",

language = "Korean",

journal = "Nano Letters",

issn = "1530-6984",

}