Using the P-NiO/N-polyaniline/N-Si schottky diode to detect hydrazinobenzene

New and effective chemosensor is fabricated using p-nickel oxide (NiO)/ nconducting polyaniline (PANI) based Schottky barrier diode for the detection of hydrazinobenzene chemical. The n-PANI is synthesized through in-situ chemical doping of PANI EB by using calcium hydride as dopant and subjected to elemental analysis, optical, structural and morphological properties. The appearance of a non-linear I-V behavior at the interface of Pt and p-NiO/n-PANI layer confirms the formation of Schottky junction of the fabricated Pt/p-NiO/n-PANI/n-Si Schottky barrier diode. The electrochemical properties of Pt/p-NiO/n-PANI/n-Si Schottky barrier diode towards the detection of hydrazinobenzene are elucidated by cyclovoltametry (CV) measurements. The sensing results reveal that the Pt/p-NiO/n-PANI/n-Si Schottky barrier diode exhibited a stable, reliable high sensitivity ~90.5 µA mM^-1cm^-2, good detection limit of ~5.11 µM with correlation coefficient (R) of ~0.99417 and short response time (10 s). Herein, n-type chemical doping of PANI and the formation of Schottky barrier elicits the sensing parameters such as sensitivity, detection limit and correlation coefficient.