Varactor tunned high-Q aictive inductor with broadband tuning range

Research output: Contribution to conferenceConference paperpeer-review

Abstract

This paper presents a novel high-Q inductor using conventional grounded active inductor and feedback parallel resonance circuit. The proposed high-Q inductor using tunable LC resonance circuit (HITR) consists of the conventional active grounded inductor and feedback parallel resonance circuit which is composed of low-Q spiral inductor and MOS varactor. The novelty of the proposed structure is based on the increase of Q-factor by feeding parallel resonance circuit into gyrator structure. The high-Q inductor is fabricated by 0.18um Hynix CMOS technology. The fabricated inductor shows inductance of above 45 nH and Q-factor of over 640 around 5.4 GHz.

Original languageEnglish
Title of host publication2008 International SoC Design Conference, ISOCC 2008
PagesIII42-III43
DOIs
StatePublished - 2008
Event2008 International SoC Design Conference, ISOCC 2008 - Busan, Korea, Republic of
Duration: 2008.11.242008.11.25

Publication series

Name2008 International SoC Design Conference, ISOCC 2008
Volume3

Conference

Conference2008 International SoC Design Conference, ISOCC 2008
Country/TerritoryKorea, Republic of
CityBusan
Period08.11.2408.11.25

Keywords

  • Active inductor
  • Feedback parallel resonance circuit
  • Q-factor
  • Spiral inductor

Quacquarelli Symonds(QS) Subject Topics

  • Computer Science & Information Systems

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