Abstract
We have studied the process of sealing an exposed AlAs and the wet oxidation behavior of AlAs to prevent further wet oxidation. A critical processing step consists of the formation of an oxide surface barrier by the first wet oxidation for a short time at 390 - 430 °C in the steam environment of previously room-ambient exposed AlAs surface. During this brief wet oxidation, a dense oxide barrier with a thickness of ∼ 1 μm is formed, which further blocks diffusing oxygen species during the second wet oxidation. The oxide surface barriers of ∼ 1 μm thickness formed at 408 °C and 410 °C have shown the best effectiveness of sealing against further wet oxidation. The effectiveness of the sealing is demonstrated through its use as a mask against wet oxidation in the fabrication of oxide-confined vertical-cavity surface-emitting lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 96-102 |
| Number of pages | 7 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3286 |
| DOIs | |
| State | Published - 1998 |
| Event | Vertical-Cavity Surface-Emitting Lasers II - San Jose, CA, United States Duration: 1998.01.28 → 1998.01.29 |
Keywords
- Current aperture
- Oxidation
- Oxide surface barrier
- Sealing
- VCSEL
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Computer Science & Information Systems
- Mathematics
- Engineering - Electrical & Electronic
- Engineering - Petroleum
- Data Science
- Physics & Astronomy
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