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Vertical-cavity surface-emitting lasers fabricated using a sealing of AlAs against wet oxidation

  • Dae Ho Lim*
  • , Gye Mo Yang
  • , Jong Hee Kim
  • , Kee Young Lim
  • , Hyung Jae Lee
  • *Corresponding author for this work
  • Jeonbuk National University

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have studied the process of sealing an exposed AlAs and the wet oxidation behavior of AlAs to prevent further wet oxidation. A critical processing step consists of the formation of an oxide surface barrier by the first wet oxidation for a short time at 390 - 430 °C in the steam environment of previously room-ambient exposed AlAs surface. During this brief wet oxidation, a dense oxide barrier with a thickness of ∼ 1 μm is formed, which further blocks diffusing oxygen species during the second wet oxidation. The oxide surface barriers of ∼ 1 μm thickness formed at 408 °C and 410 °C have shown the best effectiveness of sealing against further wet oxidation. The effectiveness of the sealing is demonstrated through its use as a mask against wet oxidation in the fabrication of oxide-confined vertical-cavity surface-emitting lasers.

Original languageEnglish
Pages (from-to)96-102
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3286
DOIs
StatePublished - 1998
EventVertical-Cavity Surface-Emitting Lasers II - San Jose, CA, United States
Duration: 1998.01.28 → 1998.01.29

Keywords

  • Current aperture
  • Oxidation
  • Oxide surface barrier
  • Sealing
  • VCSEL

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science
  • Computer Science & Information Systems
  • Mathematics
  • Engineering - Electrical & Electronic
  • Engineering - Petroleum
  • Data Science
  • Physics & Astronomy

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