Vertical stacks of shape-engineered InAs/InAlGaAs quantum dot and its influences on the lasing characteristics

Jin Soo Kim; Cheul Ro Lee; Byung Seok Choi; Ho Sang Kwack; Chul Wook Lee; Eun Deok Sim; Dae Kon Oh

doi:10.1063/1.2721854

Vertical stacks of shape-engineered InAs/InAlGaAs quantum dot and its influences on the lasing characteristics

Jin Soo Kim^*
, Cheul Ro Lee
, Byung Seok Choi
, Ho Sang Kwack
, Chul Wook Lee
, Eun Deok Sim
, Dae Kon Oh

^*Corresponding author for this work

Information Materials Engineering

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

20 Scopus citations

Abstract

The formation characteristics on the vertical stacks of shape-engineered InAs/InAlGaAs quantum dots (QDs), which were formed by the alternate growth method (AGQDs), were studied in terms of the modulation in strain field and phase separation. The threshold current of the broad-area laser diodes (LDs) with five stacks of the AGQDs (AGQD-LDs) was 4.5 times smaller than that of the LDs with seven stacks of the conventionally grown QDs (CQD-LDs). The slope efficiency for the AGQD-LDs was 0.16 W/A, which was higher than that of the CQD-LDs of 0.9 W/A. These results can be attributed to better confinement of the electron wave function in QDs.

Original language	English
Article number	153111
Journal	Applied Physics Letters
Volume	90
Issue number	15
DOIs	https://doi.org/10.1063/1.2721854
State	Published - 2007

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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@article{cbbb6138996741de96fe2767998b38f4,

title = "Vertical stacks of shape-engineered InAs/InAlGaAs quantum dot and its influences on the lasing characteristics",

abstract = "The formation characteristics on the vertical stacks of shape-engineered InAs/InAlGaAs quantum dots (QDs), which were formed by the alternate growth method (AGQDs), were studied in terms of the modulation in strain field and phase separation. The threshold current of the broad-area laser diodes (LDs) with five stacks of the AGQDs (AGQD-LDs) was 4.5 times smaller than that of the LDs with seven stacks of the conventionally grown QDs (CQD-LDs). The slope efficiency for the AGQD-LDs was 0.16 W/A, which was higher than that of the CQD-LDs of 0.9 W/A. These results can be attributed to better confinement of the electron wave function in QDs.",

author = "Kim, \{Jin Soo\} and Lee, \{Cheul Ro\} and Choi, \{Byung Seok\} and Kwack, \{Ho Sang\} and Lee, \{Chul Wook\} and Sim, \{Eun Deok\} and Oh, \{Dae Kon\}",

year = "2007",

doi = "10.1063/1.2721854",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "15",

}

TY - JOUR

T1 - Vertical stacks of shape-engineered InAs/InAlGaAs quantum dot and its influences on the lasing characteristics

AU - Kim, Jin Soo

AU - Lee, Cheul Ro

AU - Choi, Byung Seok

AU - Kwack, Ho Sang

AU - Lee, Chul Wook

AU - Sim, Eun Deok

AU - Oh, Dae Kon

PY - 2007

Y1 - 2007

N2 - The formation characteristics on the vertical stacks of shape-engineered InAs/InAlGaAs quantum dots (QDs), which were formed by the alternate growth method (AGQDs), were studied in terms of the modulation in strain field and phase separation. The threshold current of the broad-area laser diodes (LDs) with five stacks of the AGQDs (AGQD-LDs) was 4.5 times smaller than that of the LDs with seven stacks of the conventionally grown QDs (CQD-LDs). The slope efficiency for the AGQD-LDs was 0.16 W/A, which was higher than that of the CQD-LDs of 0.9 W/A. These results can be attributed to better confinement of the electron wave function in QDs.

AB - The formation characteristics on the vertical stacks of shape-engineered InAs/InAlGaAs quantum dots (QDs), which were formed by the alternate growth method (AGQDs), were studied in terms of the modulation in strain field and phase separation. The threshold current of the broad-area laser diodes (LDs) with five stacks of the AGQDs (AGQD-LDs) was 4.5 times smaller than that of the LDs with seven stacks of the conventionally grown QDs (CQD-LDs). The slope efficiency for the AGQD-LDs was 0.16 W/A, which was higher than that of the CQD-LDs of 0.9 W/A. These results can be attributed to better confinement of the electron wave function in QDs.

UR - https://www.scopus.com/pages/publications/34247276131

U2 - 10.1063/1.2721854

DO - 10.1063/1.2721854

M3 - Journal article

AN - SCOPUS:34247276131

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153111

ER -

Vertical stacks of shape-engineered InAs/InAlGaAs quantum dot and its influences on the lasing characteristics

Abstract

Quacquarelli Symonds(QS) Subject Topics

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