Vertically aligned carbon-nanotube arrays showing schottky behavior at room temperature

Seung Ho Jung; Soo Hwan Jeong; Sang Uck Kim; Sun Kyu Hwang; Pyung Soo Lee; Kun Hong Lee; Ju Hye Ko; Eunju Bae; Donghun Kang; Wanjun Park; Hwangyou Oh; Ju Jin Kim; Hyungseok Kim; Chan Gyung Park

doi:10.1002/smll.200400114

Vertically aligned carbon-nanotube arrays showing schottky behavior at room temperature

Seung Ho Jung^*
, Soo Hwan Jeong
, Sang Uck Kim
, Sun Kyu Hwang
, Pyung Soo Lee
, Kun Hong Lee
, Ju Hye Ko
, Eunju Bae
, Donghun Kang
, Wanjun Park
, Hwangyou Oh
, Ju Jin Kim
, Hyungseok Kim
, Chan Gyung Park

^*Corresponding author for this work

Department of Physics

Pohang University of Science and Technology
Kyungpook National University
Samsung
Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

20 Scopus citations

Abstract

Vertically aligned carbon-nanotube (CNT) arrays were fabricated in the thin-film anodic aluminum oxide (AAO) templates on silicon wafers utilizing a niobium (Nb) thin film as the source electrode. The average diameter of the CNTs was 25 nm, and the number density was 3 × 10¹⁰ cm². The CNT arrays synthesized at 700°C and above exhibited Schottky behavior even at 300 K, with energy gaps between 0.2 eV and 0.3 eV. However, individual CNTs obtained by removal of the template behaved as resistors at 300 K. The CNT/Nb oxide/Nb junction is thought to be responsible for the Schottky behavior. This structure can be a useful cornerstone in the fabrication of nanotransistors operating at room temperature.

Original language	English
Pages (from-to)	553-559
Number of pages	7
Journal	Small
Volume	1
Issue number	5
DOIs	https://doi.org/10.1002/smll.200400114
State	Published - 2005.05

Keywords

Anodization
Carbon nanotubes
Electrical properties
Template synthesis
Transistors

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Chemistry
Biological Sciences

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10.1002/smll.200400114

Cite this

@article{85e6226ffd304fcb88dc611b8df76bd2,

title = "Vertically aligned carbon-nanotube arrays showing schottky behavior at room temperature",

abstract = "Vertically aligned carbon-nanotube (CNT) arrays were fabricated in the thin-film anodic aluminum oxide (AAO) templates on silicon wafers utilizing a niobium (Nb) thin film as the source electrode. The average diameter of the CNTs was 25 nm, and the number density was 3 × 1010 cm2. The CNT arrays synthesized at 700°C and above exhibited Schottky behavior even at 300 K, with energy gaps between 0.2 eV and 0.3 eV. However, individual CNTs obtained by removal of the template behaved as resistors at 300 K. The CNT/Nb oxide/Nb junction is thought to be responsible for the Schottky behavior. This structure can be a useful cornerstone in the fabrication of nanotransistors operating at room temperature.",

keywords = "Anodization, Carbon nanotubes, Electrical properties, Template synthesis, Transistors",

author = "Jung, \{Seung Ho\} and Jeong, \{Soo Hwan\} and Kim, \{Sang Uck\} and Hwang, \{Sun Kyu\} and Lee, \{Pyung Soo\} and Lee, \{Kun Hong\} and Ko, \{Ju Hye\} and Eunju Bae and Donghun Kang and Wanjun Park and Hwangyou Oh and Kim, \{Ju Jin\} and Hyungseok Kim and Park, \{Chan Gyung\}",

year = "2005",

month = may,

doi = "10.1002/smll.200400114",

language = "English",

volume = "1",

pages = "553--559",

journal = "Small",

issn = "1613-6810",

number = "5",

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T1 - Vertically aligned carbon-nanotube arrays showing schottky behavior at room temperature

AU - Jung, Seung Ho

AU - Jeong, Soo Hwan

AU - Kim, Sang Uck

AU - Hwang, Sun Kyu

AU - Lee, Pyung Soo

AU - Lee, Kun Hong

AU - Ko, Ju Hye

AU - Bae, Eunju

AU - Kang, Donghun

AU - Park, Wanjun

AU - Oh, Hwangyou

AU - Kim, Ju Jin

AU - Kim, Hyungseok

AU - Park, Chan Gyung

PY - 2005/5

Y1 - 2005/5

N2 - Vertically aligned carbon-nanotube (CNT) arrays were fabricated in the thin-film anodic aluminum oxide (AAO) templates on silicon wafers utilizing a niobium (Nb) thin film as the source electrode. The average diameter of the CNTs was 25 nm, and the number density was 3 × 1010 cm2. The CNT arrays synthesized at 700°C and above exhibited Schottky behavior even at 300 K, with energy gaps between 0.2 eV and 0.3 eV. However, individual CNTs obtained by removal of the template behaved as resistors at 300 K. The CNT/Nb oxide/Nb junction is thought to be responsible for the Schottky behavior. This structure can be a useful cornerstone in the fabrication of nanotransistors operating at room temperature.

AB - Vertically aligned carbon-nanotube (CNT) arrays were fabricated in the thin-film anodic aluminum oxide (AAO) templates on silicon wafers utilizing a niobium (Nb) thin film as the source electrode. The average diameter of the CNTs was 25 nm, and the number density was 3 × 1010 cm2. The CNT arrays synthesized at 700°C and above exhibited Schottky behavior even at 300 K, with energy gaps between 0.2 eV and 0.3 eV. However, individual CNTs obtained by removal of the template behaved as resistors at 300 K. The CNT/Nb oxide/Nb junction is thought to be responsible for the Schottky behavior. This structure can be a useful cornerstone in the fabrication of nanotransistors operating at room temperature.

KW - Anodization

KW - Carbon nanotubes

KW - Electrical properties

KW - Template synthesis

KW - Transistors

UR - https://www.scopus.com/pages/publications/33745451449

U2 - 10.1002/smll.200400114

DO - 10.1002/smll.200400114

M3 - Journal article

C2 - 17193485

AN - SCOPUS:33745451449

SN - 1613-6810

VL - 1

SP - 553

EP - 559

JO - Small

JF - Small

IS - 5

ER -

Vertically aligned carbon-nanotube arrays showing schottky behavior at room temperature

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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