Visible luminescence of nanocrystalline AlN:Er thin film by co-deposition of AlN, Er, and SiO2

J. W. Lim; W. Takayama; Y. F. Zhu; J. W. Bae; J. F. Wang; S. Y. Ji; K. Mimura; J. H. Yoo; M. Isshiki

doi:10.1016/j.cap.2006.05.003

Visible luminescence of nanocrystalline AlN:Er thin film by co-deposition of AlN, Er, and SiO₂

J. W. Lim^*
, W. Takayama
, Y. F. Zhu
, J. W. Bae
, J. F. Wang
, S. Y. Ji
, K. Mimura
, J. H. Yoo
, M. Isshiki

^*Corresponding author for this work

Metallurgical System Engineering

Tohoku University
Japan Radio Corporation
National NanoFab Center

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

We report a visible luminescence of Er³⁺ ions in an amorphous-nanocrystalline AlN:Er thin film prepared by co-deposition using AlN, Er, and SiO₂ targets. A PL emission spectrum of Er³⁺ in the AlN:Er film annealed at 750 °C showed a strong bluish green emission of Er³⁺ in the amorphous-nanocrystalline AlN:Er thin film, which is attributed to the intra-4fEr³⁺ transitions of ²H_11/2 →⁴I_15/2 and ⁴F_7/2 →⁴I_15/2. It was found that crystallite diameters were between 3 and 5 nm by high-resolution transmission electron microscopy. The occurrence of the strong Er³⁺ emission in the annealed AlN:Er thin film with a mixture of amorphous and nanocrystalline phases may be contributed to an increase in the number of excitation Er³⁺ centers and a presence of oxygen related to Er³⁺ excitation and recombination process in the AlN:Er thin film.

Original language	English
Pages (from-to)	236-239
Number of pages	4
Journal	Current Applied Physics
Volume	7
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2006.05.003
State	Published - 2007.03

Keywords

Aluminium nitride
Deposition
Erbium
Luminescence
Thin film

Access to Document

10.1016/j.cap.2006.05.003

Cite this

@article{3887c83ba5d045ddbdb4946b60867bd4,

title = "Visible luminescence of nanocrystalline AlN:Er thin film by co-deposition of AlN, Er, and SiO2",

abstract = "We report a visible luminescence of Er3+ ions in an amorphous-nanocrystalline AlN:Er thin film prepared by co-deposition using AlN, Er, and SiO2 targets. A PL emission spectrum of Er3+ in the AlN:Er film annealed at 750 °C showed a strong bluish green emission of Er3+ in the amorphous-nanocrystalline AlN:Er thin film, which is attributed to the intra-4fEr3+ transitions of 2H11/2 → 4I15/2 and 4F7/2 → 4I15/2. It was found that crystallite diameters were between 3 and 5 nm by high-resolution transmission electron microscopy. The occurrence of the strong Er3+ emission in the annealed AlN:Er thin film with a mixture of amorphous and nanocrystalline phases may be contributed to an increase in the number of excitation Er3+ centers and a presence of oxygen related to Er3+ excitation and recombination process in the AlN:Er thin film.",

keywords = "Aluminium nitride, Deposition, Erbium, Luminescence, Thin film",

author = "Lim, \{J. W.\} and W. Takayama and Zhu, \{Y. F.\} and Bae, \{J. W.\} and Wang, \{J. F.\} and Ji, \{S. Y.\} and K. Mimura and Yoo, \{J. H.\} and M. Isshiki",

year = "2007",

month = mar,

doi = "10.1016/j.cap.2006.05.003",

language = "English",

volume = "7",

pages = "236--239",

journal = "Current Applied Physics",

issn = "1567-1739",

number = "3",

}

TY - JOUR

T1 - Visible luminescence of nanocrystalline AlN:Er thin film by co-deposition of AlN, Er, and SiO2

AU - Lim, J. W.

AU - Takayama, W.

AU - Zhu, Y. F.

AU - Bae, J. W.

AU - Wang, J. F.

AU - Ji, S. Y.

AU - Mimura, K.

AU - Yoo, J. H.

AU - Isshiki, M.

PY - 2007/3

Y1 - 2007/3

N2 - We report a visible luminescence of Er3+ ions in an amorphous-nanocrystalline AlN:Er thin film prepared by co-deposition using AlN, Er, and SiO2 targets. A PL emission spectrum of Er3+ in the AlN:Er film annealed at 750 °C showed a strong bluish green emission of Er3+ in the amorphous-nanocrystalline AlN:Er thin film, which is attributed to the intra-4fEr3+ transitions of 2H11/2 → 4I15/2 and 4F7/2 → 4I15/2. It was found that crystallite diameters were between 3 and 5 nm by high-resolution transmission electron microscopy. The occurrence of the strong Er3+ emission in the annealed AlN:Er thin film with a mixture of amorphous and nanocrystalline phases may be contributed to an increase in the number of excitation Er3+ centers and a presence of oxygen related to Er3+ excitation and recombination process in the AlN:Er thin film.

AB - We report a visible luminescence of Er3+ ions in an amorphous-nanocrystalline AlN:Er thin film prepared by co-deposition using AlN, Er, and SiO2 targets. A PL emission spectrum of Er3+ in the AlN:Er film annealed at 750 °C showed a strong bluish green emission of Er3+ in the amorphous-nanocrystalline AlN:Er thin film, which is attributed to the intra-4fEr3+ transitions of 2H11/2 → 4I15/2 and 4F7/2 → 4I15/2. It was found that crystallite diameters were between 3 and 5 nm by high-resolution transmission electron microscopy. The occurrence of the strong Er3+ emission in the annealed AlN:Er thin film with a mixture of amorphous and nanocrystalline phases may be contributed to an increase in the number of excitation Er3+ centers and a presence of oxygen related to Er3+ excitation and recombination process in the AlN:Er thin film.

KW - Aluminium nitride

KW - Deposition

KW - Erbium

KW - Luminescence

KW - Thin film

UR - https://www.scopus.com/pages/publications/33845898896

U2 - 10.1016/j.cap.2006.05.003

DO - 10.1016/j.cap.2006.05.003

M3 - Journal article

AN - SCOPUS:33845898896

SN - 1567-1739

VL - 7

SP - 236

EP - 239

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

Visible luminescence of nanocrystalline AlN:Er thin film by co-deposition of AlN, Er, and SiO₂

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this