Wet chemical etching of semipolar GaN planes to obtain brighter and cost-competitive light emitters

Sungmin Jung; Ki Ryong Song; Sung Nam Lee; Hyunsoo Kim

doi:10.1002/adma.201301640

Wet chemical etching of semipolar GaN planes to obtain brighter and cost-competitive light emitters

Sungmin Jung
, Ki Ryong Song
, Sung Nam Lee^*
, Hyunsoo Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University
Tech University of Korea

Research output: Contribution to journal › Journal article › peer-review

59 Scopus citations

Abstract

Spotlight on etching: (11-22) semipolar GaN plane light-emitting diodes (LEDs) are demonstrated using a wet-etching process. A trigonal prism cell structure with a (0001) c plane and nnn{10-10} m planes is formed after KOH wet etching, and leads to a better ohmic contact and enhanced light extraction. LEDs fabricated by wet etching show excellent output performance 1.89 times higher than that of the reference LEDs.

Original language	English
Pages (from-to)	4470-4476
Number of pages	7
Journal	Advanced Materials
Volume	25
Issue number	32
DOIs	https://doi.org/10.1002/adma.201301640
State	Published - 2013.08.27

Keywords

extraction efficiencies
light emitting diodes
ohmic contacts
semipolar GaN planes
wet etching

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Mechanical

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10.1002/adma.201301640

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title = "Wet chemical etching of semipolar GaN planes to obtain brighter and cost-competitive light emitters",

abstract = "Spotlight on etching: (11-22) semipolar GaN plane light-emitting diodes (LEDs) are demonstrated using a wet-etching process. A trigonal prism cell structure with a (0001) c plane and nnn\{10-10\} m planes is formed after KOH wet etching, and leads to a better ohmic contact and enhanced light extraction. LEDs fabricated by wet etching show excellent output performance 1.89 times higher than that of the reference LEDs.",

keywords = "extraction efficiencies, light emitting diodes, ohmic contacts, semipolar GaN planes, wet etching",

author = "Sungmin Jung and Song, \{Ki Ryong\} and Lee, \{Sung Nam\} and Hyunsoo Kim",

year = "2013",

month = aug,

day = "27",

doi = "10.1002/adma.201301640",

language = "English",

volume = "25",

pages = "4470--4476",

journal = "Advanced Materials",

issn = "0935-9648",

number = "32",

}

TY - JOUR

T1 - Wet chemical etching of semipolar GaN planes to obtain brighter and cost-competitive light emitters

AU - Jung, Sungmin

AU - Song, Ki Ryong

AU - Lee, Sung Nam

AU - Kim, Hyunsoo

PY - 2013/8/27

Y1 - 2013/8/27

N2 - Spotlight on etching: (11-22) semipolar GaN plane light-emitting diodes (LEDs) are demonstrated using a wet-etching process. A trigonal prism cell structure with a (0001) c plane and nnn{10-10} m planes is formed after KOH wet etching, and leads to a better ohmic contact and enhanced light extraction. LEDs fabricated by wet etching show excellent output performance 1.89 times higher than that of the reference LEDs.

AB - Spotlight on etching: (11-22) semipolar GaN plane light-emitting diodes (LEDs) are demonstrated using a wet-etching process. A trigonal prism cell structure with a (0001) c plane and nnn{10-10} m planes is formed after KOH wet etching, and leads to a better ohmic contact and enhanced light extraction. LEDs fabricated by wet etching show excellent output performance 1.89 times higher than that of the reference LEDs.

KW - extraction efficiencies

KW - light emitting diodes

KW - ohmic contacts

KW - semipolar GaN planes

KW - wet etching

UR - https://www.scopus.com/pages/publications/84882578082

U2 - 10.1002/adma.201301640

DO - 10.1002/adma.201301640

M3 - Journal article

AN - SCOPUS:84882578082

SN - 0935-9648

VL - 25

SP - 4470

EP - 4476

JO - Advanced Materials

JF - Advanced Materials

IS - 32

ER -

Wet chemical etching of semipolar GaN planes to obtain brighter and cost-competitive light emitters

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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