TY - GEN
T1 - Wideband CMOS high-Q 2-port active inductor using parallel LC resonance Circuit
AU - Koo, Jageon
AU - An, Boram
AU - Jeong, Yongchae
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2017/5/17
Y1 - 2017/5/17
N2 - This paper presents a novel 2-port high-Q active inductor using LC parallel resonator. The proposed 2-port high-Q active inductor consists of the feedback parallel resonance circuits that comprises of low-Q spiral inductor and capacitor. The novelty of the proposed structure can improve its Q-factor due to decrease of the parasitic capacitances and extend high-Q operating frequency range. For an experimental validation, the 2-port active inductor was fabricated wit 65 nm Samsung CMOS technology. The fabricated circuit shows inductance of above 2 nH and Q-factor higher than 35 in the frequency range of 3 ∼ 10 GHz.
AB - This paper presents a novel 2-port high-Q active inductor using LC parallel resonator. The proposed 2-port high-Q active inductor consists of the feedback parallel resonance circuits that comprises of low-Q spiral inductor and capacitor. The novelty of the proposed structure can improve its Q-factor due to decrease of the parasitic capacitances and extend high-Q operating frequency range. For an experimental validation, the 2-port active inductor was fabricated wit 65 nm Samsung CMOS technology. The fabricated circuit shows inductance of above 2 nH and Q-factor higher than 35 in the frequency range of 3 ∼ 10 GHz.
UR - https://www.scopus.com/pages/publications/85021251235
U2 - 10.1109/APMC.2016.7931303
DO - 10.1109/APMC.2016.7931303
M3 - Conference paper
AN - SCOPUS:85021251235
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
BT - 2016 Asia-Pacific Microwave Conference, APMC 2016 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 Asia-Pacific Microwave Conference, APMC 2016
Y2 - 5 December 2016 through 9 December 2016
ER -