Xenon Flash Lamp-Induced Ultrafast Multilayer Graphene Growth

Tae Hong Im; Dae Yong Park; Hwan Keon Lee; Jung Hwan Park; Chang Kyu Jeong; Daniel J. Joe; Keon Jae Lee

doi:10.1002/ppsc.201600429

Xenon Flash Lamp-Induced Ultrafast Multilayer Graphene Growth

Tae Hong Im
, Dae Yong Park
, Hwan Keon Lee
, Jung Hwan Park
, Chang Kyu Jeong
, Daniel J. Joe
, Keon Jae Lee^*

^*Corresponding author for this work

Electronic Materials Engineering

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

31 Scopus citations

Abstract

Optically induced annealing technology has provided promising strategies to synthesize graphene for future flexible electronics. Focused laser-assisted methods have the capability of direct graphene growth, but have significant drawbacks such as small beam size, and locally different intrinsic properties caused by energy variations of each pulsed shot. Herein, a novel synthesis method of multilayer graphene (MLG) via xenon flash lamp with intense and achromatic light is presented. An extremely high temperature (over 1500 °C) by a single flash irradiation induces the MLG with about 15 layers in milliseconds time scale. Experimental and theoretical studies reveal characteristics of the MLG with I _2D/I _G of 0.65 and average sheet resistance of 3.272 × 10³ Ω sq⁻¹ as well as photothermal interactions between flash and metal catalyst. The synthesized MLG is successfully transferred onto plastic substrates, demonstrating a new feasibility of the flash lamp system for next-generation flexible electronics.

Original language	English
Article number	1600429
Journal	Particle and Particle Systems Characterization
Volume	34
Issue number	9
DOIs	https://doi.org/10.1002/ppsc.201600429
State	Published - 2017.09

Keywords

photothermal effect
ultrafast graphene synthesis
xenon flash lamp

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10.1002/ppsc.201600429

Cite this

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title = "Xenon Flash Lamp-Induced Ultrafast Multilayer Graphene Growth",

abstract = "Optically induced annealing technology has provided promising strategies to synthesize graphene for future flexible electronics. Focused laser-assisted methods have the capability of direct graphene growth, but have significant drawbacks such as small beam size, and locally different intrinsic properties caused by energy variations of each pulsed shot. Herein, a novel synthesis method of multilayer graphene (MLG) via xenon flash lamp with intense and achromatic light is presented. An extremely high temperature (over 1500 °C) by a single flash irradiation induces the MLG with about 15 layers in milliseconds time scale. Experimental and theoretical studies reveal characteristics of the MLG with I 2D/I G of 0.65 and average sheet resistance of 3.272 × 103 Ω sq−1 as well as photothermal interactions between flash and metal catalyst. The synthesized MLG is successfully transferred onto plastic substrates, demonstrating a new feasibility of the flash lamp system for next-generation flexible electronics.",

keywords = "photothermal effect, ultrafast graphene synthesis, xenon flash lamp",

author = "Im, \{Tae Hong\} and Park, \{Dae Yong\} and Lee, \{Hwan Keon\} and Park, \{Jung Hwan\} and Jeong, \{Chang Kyu\} and Joe, \{Daniel J.\} and Lee, \{Keon Jae\}",

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year = "2017",

month = sep,

doi = "10.1002/ppsc.201600429",

language = "English",

volume = "34",

journal = "Particle and Particle Systems Characterization",

issn = "0934-0866",

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TY - JOUR

T1 - Xenon Flash Lamp-Induced Ultrafast Multilayer Graphene Growth

AU - Im, Tae Hong

AU - Park, Dae Yong

AU - Lee, Hwan Keon

AU - Park, Jung Hwan

AU - Jeong, Chang Kyu

AU - Joe, Daniel J.

AU - Lee, Keon Jae

PY - 2017/9

Y1 - 2017/9

N2 - Optically induced annealing technology has provided promising strategies to synthesize graphene for future flexible electronics. Focused laser-assisted methods have the capability of direct graphene growth, but have significant drawbacks such as small beam size, and locally different intrinsic properties caused by energy variations of each pulsed shot. Herein, a novel synthesis method of multilayer graphene (MLG) via xenon flash lamp with intense and achromatic light is presented. An extremely high temperature (over 1500 °C) by a single flash irradiation induces the MLG with about 15 layers in milliseconds time scale. Experimental and theoretical studies reveal characteristics of the MLG with I 2D/I G of 0.65 and average sheet resistance of 3.272 × 103 Ω sq−1 as well as photothermal interactions between flash and metal catalyst. The synthesized MLG is successfully transferred onto plastic substrates, demonstrating a new feasibility of the flash lamp system for next-generation flexible electronics.

AB - Optically induced annealing technology has provided promising strategies to synthesize graphene for future flexible electronics. Focused laser-assisted methods have the capability of direct graphene growth, but have significant drawbacks such as small beam size, and locally different intrinsic properties caused by energy variations of each pulsed shot. Herein, a novel synthesis method of multilayer graphene (MLG) via xenon flash lamp with intense and achromatic light is presented. An extremely high temperature (over 1500 °C) by a single flash irradiation induces the MLG with about 15 layers in milliseconds time scale. Experimental and theoretical studies reveal characteristics of the MLG with I 2D/I G of 0.65 and average sheet resistance of 3.272 × 103 Ω sq−1 as well as photothermal interactions between flash and metal catalyst. The synthesized MLG is successfully transferred onto plastic substrates, demonstrating a new feasibility of the flash lamp system for next-generation flexible electronics.

KW - photothermal effect

KW - ultrafast graphene synthesis

KW - xenon flash lamp

UR - https://www.scopus.com/pages/publications/85019169597

U2 - 10.1002/ppsc.201600429

DO - 10.1002/ppsc.201600429

M3 - Journal article

AN - SCOPUS:85019169597

SN - 0934-0866

VL - 34

JO - Particle and Particle Systems Characterization

JF - Particle and Particle Systems Characterization

IS - 9

M1 - 1600429

ER -

Xenon Flash Lamp-Induced Ultrafast Multilayer Graphene Growth

Abstract

Keywords

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